Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-07-03T02:39:17.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Hydrogen Radicals on the Composition and Hydrogen Bonding of Amorphous Silicon-Germanium Thin Films

Published online by Cambridge University Press:  25 February 2011

D. E. Albright ,
C. M. Fortmann  and
T. W. F. Russell
D. E. Albright
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
T. W. F. Russell
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Get access

Abstract

A reaction engineering model of the mercury sensitized photochemical vapor deposition of amorphous silicon-germanium thin films is used in conjunction with experimental results to describe the role of hydrogen radical reactions in determining film composition, hydrogen bonding and microcrystallinity. Selective removal of silicon from the film by hydrogen radicals is shown to increase with decreasing temperature, raising the germanium content of films in hydrogen diluted depositions below 2 torr. Etching of a-Ge:H by hydrogen radicals is determined to be nearly two orders of magnitude slower than that of a-Si:H. Hydrogen radicals are also shown to promote microcrystallinity by selectively removing amorphous phase silicon and bonded hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 521
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fortmann, C.M. and Tu, J., Proceedings of 20th IEEE, PVSC (1988)Google Scholar
2. Yamanaka, S., Yoshida, S., Konagai, M., Takahashi, K., Jap. J. Appl. Phys. 26 (7), 1107 (1987)Google Scholar
3. Rocheleau, R.E., Hegedus, S.S., Buchanan, W.A., Jackson, S.C., Appl. Phys. Lett. 51 (2), 133 (1987)Google Scholar
4. Perrin, J. and Allain, B., J. Chem. Phys. 123 (2), 295 (1988)Google Scholar
5. Perrin, J. and Broekhuizen, T., Appl. Phys. Lett. 50 (8), 433 (1987)Google Scholar
6. Austin, E.R. and Lampe, F.W., J. Phys. Chem. 81 (12), 1134 (1977)Google Scholar
7. Choo, K.Y., Gaspar, P.P. and Wolf, A.P., J. Phys. Chem. 79 (17), 1752 (1975)Google Scholar
8. Perrin, J. and Allain, B., Presented at 12th ICALS, Prague 1987 Google Scholar