Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-19T12:51:39.706Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Hydrogen Plasma Treatment on Hysteresis Phenomenon and Electrical Properties for Solid Phase Crystallized Silicon Thin Film Transistors

Published online by Cambridge University Press:  31 January 2011

Sung-Hwan Choi ,
Sang-Geun Park ,
Chang-Yeon Kim  and
Min-Koo Han
Sung-Hwan Choi
Affiliation:
cshero@emlab.snu.ac.krhero9396@hanmail.net, Seoul National University, School of Electrical Engineering and Computer Sciences, Seoul, Korea, Republic of
Sang-Geun Park
Affiliation:
psg97@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, Seoul, Korea, Republic of
Chang-Yeon Kim
Affiliation:
kcyeon@chol.com, Seoul National University, School of Electrical Engineering and Computer Sciences, Seoul, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering and Computer Sciences, Seoul, Korea, Republic of
Get access

Abstract

We have investigated the effects of hydrogen plasma treatment on the hysteresis phenomenon and electrical properties of solid phase crystallized silicon thin film transistors (SPC-Si TFTs) employing alternating magnetic field crystallization (AMFC). We employed H2 plasma treatment on the SPC-Si active layer before SiO2 gate insulator deposition. By increasng the power and time duration of H2 plasma treatment, it was observed that hysteresis phenomenon of SPC-Si TFT was suppressed and electrical properties such as threshold voltage, field effect mobility was improved considerably. This is due to role of hydrogen atom by passivating the defects and grain boundary trap states in SPC-Si film. However, relatively high power and long hydrogen plasma treatment (100W, 5 minutes) could degrade the electrical characteristics of the device. SPC-Si TFT for 100W power of PECVD and 3 minutes with the H2 plasma treatment exhibit the significant improvement of electrical characterics (VTH = - 3.85V, μFE = 21.16cm2/Vs), and a smaller hysteresis phenomenon (∆VTH = -0.30V) which is suitable for high quality AMOLED Display.

Keywords

Sithin filmH
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A21-05
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Stewart, M. IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845–851 (2001).Google Scholar
2 Kim, B.K. Kim, O.H. Chung, H.J. Chang, J.W. and Ha, Y.M. Japanese Journal of Applied Physics, vol.43, no.4A, pp. L482–L485 (2004).Google Scholar
3 Kim, C.Y. Park, S.G. Han, M.K. Lee, H.K. Lee, S.W. Jung, S.H. Kim, C.D. and Kang, I. B. Journal of The Electrochemical Society, Vol. 155, No. 4, pp. H224–H227 (2008).Google Scholar
4 Morimoto, Y. Jinno, Y. Hirai, K. gata, H. Yamada, T. and Yoneda, K. J. Electrochem. Soc., Volume 144, Issue 7, pp. 2495–2501 (1997).Google Scholar
5 Wu, I.W. Huang, T.Y. Jackson, W.B. Lewis, A.G. and Chiang, A. IEEE Electron Device Lett., Vol. 12, No. 4, pp. 181–183 (1991).Google Scholar
6 Lee, Y.S. Lin, H.Y. Lei, T.F. Huang, T.Y. Chang, T.C. and Chang, C.Y. Jpn. J. Appl. Phys., Vol. 37, pp. 3900–3903 (1998).Google Scholar
7 Luan, S. and Neudeck, G.W. J. Appl.Phys. Vol. 68 (1990).Google Scholar
8 Tsai, J.W. Huang, C.Y. Tai, Y.H. and Cheng, H.C. Su, F.C. Luo, F.C. and Tuan, H. C. Appl. Phys. Lett./ Vol. 71, Issue 9, pp. 1237–1239 (1997).Google Scholar
9 Levinson, J. Shepherd, F. R. Scanlon, P. J. Westwood, W. D. Este, G. and Rider, M. J. Appl. Phys. Vol. 53, Issue 2, pp. 1193–1202 (1982).Google Scholar