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Effects of hydrogen in AlAs growth by atomic hydrogenassisted molecular beam epitaxy

Published online by Cambridge University Press:  10 February 2011

Kee-Youn Jang ,
Yoshitaka Okada  and
Mitsuo Kawabe
Kee-Youn Jang
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennodai, Tsukuba 305-8573, Japan
Yoshitaka Okada
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennodai, Tsukuba 305-8573, Japan
Mitsuo Kawabe
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennodai, Tsukuba 305-8573, Japan
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Abstract

The transition temperature Tc for the AlAs growth to change from/to a nucleation mode and step-flow mode have been studied on vicinal GaAs substrates (A-surface and B-surface) in molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) using reflection high-energy electron diffraction (RHEED). The lowering of Tc was clearly observed in H-MBE compared to conventional MBE. For growth of AlAs on vicinal GaAs substrate in H-MBE, atomic H is thought to promote not only the re-evaporation of Al adatoms on the terrace, but also the incorporation of Al at the step edges, thereby facilitating a step-flow growth mode at a lower temperature than in MBE. The differences in the fundamental growth mode between on A-surface and B-surface have also been studies based on the differences in the atomic structure between the two substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 285
Copyright
Copyright © Materials Research Society 1999

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References

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