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Effects of H+-Implantation On Electron Traps In N-Type Si Induced by P+ Pre-Implantation

Published online by Cambridge University Press:  15 February 2011

Akira Ito ,
Hiroyuki Iwata  and
Yutaka Tokuda
Akira Ito
Affiliation:
Department of Electronic and Information Engineering, Suzuka College of Technology, Shiroko, Suzuka 510–02, Japan, aito@info.suzuka-ct.ac.jp
Hiroyuki Iwata
Affiliation:
Research Institute for Industrial Technology, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
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Abstract

The change of the concentration of electron traps in n-type Si induced by P+ implantation (300keV, l×109 cm−2) with subsequent H+-implantation has been studied by deep level transient spectroscopy. H+-implantation is performed at room temperature to a dose of 2×1010cm−2 in the range 30 to 120keV. First P+ implantation induces six electron traps (Ec-0.12, 0.15, 0.21, 0.26, 0.39, 0.49eV). H+-implantation additionally induces an electron trap (Ec-0.32eV) which is related to hydrogen. The subsequent H+-implantation partly decreases the concentration of the electron traps induced by P+ implantation, although it increases the concentrations near the H+ projected range. 30 keV H+-implantation is mdst effective to reduce the trap concentration. The reduction of the concentration of the traps is ascribed to the reaction of pre-existing defects with interstitial or vacancy defects formed by subsequent H+-implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 281
Copyright
Copyright © Materials Research Society 1997

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