Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-13T09:59:45.877Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Growth Conditions on EL-2 Concentration in OMVPE- GaAs

Published online by Cambridge University Press:  26 February 2011

R. Venkatasubramanian ,
W. I. Lee ,
S. K. Ghandhi  and
J. M. Borrego
R. Venkatasubramanian
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
W. I. Lee
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
S. K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
J. M. Borrego
Affiliation:
Electrical, Computer and Systems Engineering Dept. Rensselaer Polytechnic Institute, Troy, N.Y. 12180
Get access

Abstract

We have studied, using DLTS, the EL-2 concentration in unintentionally doped OMVPE n-GaAs as a function of growth conditions such as partial pressure of Arsine, Trimethylgallium and growth temperature. The partial pressure dependencies are used to develop a model for the formation of EL-2 in the OMVPE process. The EL-2 concentration also shows a near inverse dependence on growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 397
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1)Bhattacharya, P.K., Ku, J.W., Owen, S.J.T., Aebi, V., Cooper, C.B. and Moon, R.L., Appl.Phys.Lett., 36, 304 (1980).Google Scholar
2)Mitonneau, A., Mircea, A., Martin, G.M. and Pons, D., Revue De Physique Appliquee, 14, 853 (1979).Google Scholar
3)Miller, M.D., Olsen, G.H. and Ettenberg, M., Appl.Phys.Lett., 31, 538 (1977).Google Scholar
4)Samuelson, L., Titze, P. Omling'H. and Grimmeiss, H.G., J.Cryst.Growth, 55, 164 (1981).Google Scholar
5)Zhu, He-Zhong, Adachi, Yoshio and Ikoma, Toshiaki, J.Cryst.Growth, 55, 154 (1981).Google Scholar
6)Lang, D.V., J.Appl.Phys., 45, 3023 (1974).Google Scholar
7)Verity, D., Bryant, F.J., Scott, C.G. and Shaw, D., J.Cryst.Growth, 59, 234 (1982).Google Scholar
8)Fang, Zhao-Qiang, Schlesinger, T.E., and Milnes, A.G., J.Appl.Phys., 61, 5047 (1987).Google Scholar
9)Reep, D.H. and Ghandhi, S.K., J.Electrochem. Soc., 130, 675 (1983).Google Scholar
10)Watanabe, Miyoko Oku, Tanaka, Atsushi, Nakanisi, Takatosi and Zohta, Yasuhito, Jap.J.Appl.Phys., 20, L429 (1981).Google Scholar
11)Ruby, D.S., Arai, K. and Stillman, G.E., J.Appl.Phys.,58,825 (1985).Google Scholar