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Effects of Ge-Implantation on the Photoluminescence of CuGaSe2 Thin Films

Published online by Cambridge University Press:  01 February 2011

Serge Doka ,
Marin Rusu ,
Alex Meeder ,
Ernest Arushanov ,
Norbert Fabre ,
Sebastian Fiechter ,
Thomas Schedel-Niedrig  and
Martha Ch. Lux-Steiner
Serge Doka
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Marin Rusu
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Alex Meeder
Affiliation:
SULFURCELL Solartechnik GmbH, Barbara-McClintock-Str. 11, 12489 Berlin
Ernest Arushanov
Affiliation:
Institute of Applied Physics, Academy of Sciences of the Republic Moldova, Academiei 5, Chisinau 277028, Moldova.
Norbert Fabre
Affiliation:
LAAS- CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France.
Sebastian Fiechter
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Thomas Schedel-Niedrig
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Martha Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

Photoluminescence (PL) spectra of as grown Ga-rich, and Ga-rich plus Ge-doped and annealed CCSVT (Chemical Close-Spaced Vapor Transport) — CuGaSe2 thin films have been investigated. Visible (514.5 nm) and Ultra- Violet (351.1 nm) excitation energies of the laser have been used in order to determine intrinsic and extrinsic defects created due to the implantation as well as separating near surface from bulk recombination.

Both visible and UV-PL spectra of the undoped films show the well known luminescence of Ga-rich CuGaSe2, which can be described by the widely accepted model of fluctuating potentials. Unlike the visible- and UV-PL emissions of Ge- implanted and annealed films differ strongly. Obviously, Ge-implantation in combination with the thermal treatment results in an extrinsic doping of the material producing so far unknown states in the CuGaSe2 band gap. Comparing the visible- and the UV-PL spectra we found an accumulation of these extrinsic doping levels in the near-surface-region of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.27
Copyright
Copyright © Materials Research Society 2005

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