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Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors

  • Jian Z. Chen (a1), Yeh Chih-Yong (a2), I-Chung Chiu (a3), I-Chun Cheng (a4), Jung-Jie Huang (a5) and Yung-Pei Chen (a6)...

Abstract

We analyzed the effect of electromechanical stressing on the electrical characteristics of hydrogenated amorphous silicon thin-film transistors. It had been shown that the TFTs, fabricated at 150 °C, respond to tension/compression by a rise/fall in electron mobility. In TFTs fabricated using the same process, a slight shift of threshold voltage was observed under prolonged high compressive strain and the gate leakage current slightly increases after ˜2% compressive strain. In general, the change of TFT performance due to pure mechanical straining is small in comparison to electrical gate-bias stressing. From the comparison among Maxwell stress (induced by electrical gate-bias stressing), mechanical stress (applied by bending), and drifting electrical force for passivated hydrogen atom, the most significant cause for the change of electrical characterization of a-Si:H TFTs should be the trapping charges inside the dielectric, under combined electrical and mechanical stressing. The mechanical stress does not act on Si-H bonds to drift hydrogen atoms, while it is mainly balanced by the rigid Si-Si networks in a-Si:H or a-SiNx. Therefore, mechanical stress has very little effect on the instability of low temperature processed a-Si:H TFTs.

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Keywords

Effects of electro-mechanical stressing on the electrical characterization of on-plastic a-Si:H thin film transistors

  • Jian Z. Chen (a1), Yeh Chih-Yong (a2), I-Chung Chiu (a3), I-Chun Cheng (a4), Jung-Jie Huang (a5) and Yung-Pei Chen (a6)...

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