Skip to main content Accessibility help
×
Home

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor

  • Phuc Hong Than (a1), Kazuo Uchida (a1), Takahiro Makino (a2), Takeshi Ohshima (a2) and Shinji Nozaki (a1)...

Abstract

In this paper, we discuss the characteristics of the InGaP/GaAs heterojunction phototransistors (HPTs) before and after the electrical stress at room temperature and assess the effectiveness of the emitter-ledge passivation. Although an electrical stress given to the phototransistors by keeping a collector current density of 37 A/cm2 for 1 hour at room temperature was too small to affect the room-temperature common-emitter current gain and photocurrent of both HPTs with and without the emitter-ledge passivation, they showed a significant decrease at 420 K due to the room-temperature electrical stress. Nevertheless, the room-temperature common-emitter current gain and photocurrent of the HPT with the emitter-ledge passivation were still higher than those of the HPT without the emitter-ledge passivation. The effectiveness of the emitter-ledge passivation against the electrical stress was more significant than that on the current gain in the dark. In addition to the electrical stress experiment, for a potential application of the InGaP/GaAs HPTs in space, we will irradiate the HPTs with 1-MeV electrons at the Japan Atomic Energy Agency. Both current gain and photocurrent decreased significantly after the electron irradiation. In contrast to the electrical stress, the damage due to the high-energy electron irradiation is a bulk-related phenomenon, and the emitter-ledge passivation does not seem to suppress the degradation.

Copyright

Corresponding author

*Phone/Fax: +81-42-489-4486, Email: nozaki@ee.uec.ac.jp

References

Hide All
1. Chandrasekhar, S., IEEE Photon. Technol. Lett 5, 13161318 (1993).
2. Kamitsuna, H., Matsuoka, Y., Yamahata, S., and Shigekawa, N., IEEE Trans. Microwave Theory Tech. 49, 19211925 (2001).
3. Ha, K. H., Lee, Y. H., Song, J. I., Caneau, C., Park, C. Y., and Park, K. H., Electronics Letters 31, 13861387 (1995).
4. Song, C-K., Lee, S-H., Kim, K-D., Park, J-H., Koo, B-W., Kim, D-H., Hong, C-H., Kim, Y-K., and Hwang, S-B., IEEE Electron Device Lett. 22, 315317 (2001).
5. Tan, S-W., Chen, H-R., Chen, W-T., Hsu, M-K., Lin, A-H., and Lour, W-S., IEEE Trans. Electron Device 52, 204210 (2005).
6. Liu, W., Beam, E., Henderson, T., and Fan, S-K., IEEE Electron Device Lett. 14, 301303 (1993).
7. Ueda, O., Kawano, A., Takahashi, T., Tomioka, T., Fujii, T., and Sasa, S., Solid-State Electronics 41, 16051610 (1997).
8. Rezazadeh, A. A., Bashar, S. A., Sheng, H., Amin, F. A., Cattani, L., and Liou, J. J., in Proc. IEEE 38th Annual International Reliability Physics Symposium, 250257 (2000).
9. Adlerstein, M. G., and Gering, J. M., IEEE Trans. Electron Device 47, 434439 (2000).
10. Pan, N., Elliott, J., Knowles, M., Vu, D. P., Kishimoto, K., Twynam, J. K., Sato, H., Fresina, M. T., and Stillman, G. E., IEEE Electron Device Lett. 19, 115117 (1998).
11. Kurokawa, A., Jin, Z., Ono, H., Uchida, K., Nozaki, S., and Morisaki, H., IEICE Technical Report, ED2005–198, MW 2005–152 (2006).
12. Yang, F-Y., Nozaki, S., Uchida, K., and Koizumi, A., IEICE Technical Report, ED2007–217, MW 2007–148 (2008).
13. Song, C-K., Choi, P-J., Microelectronics Reliability 39, 18171822 (1999).
14. Sarkar, A., Subramanian, S., and Goodnick, S. M., IEEE Trans. Electron Device 47, 20242030 (2000).
15. Vuppala, S., Li, C., Zwicknagl, P., and Subramanian, S., IEEE Trans. Nuclear Science 50, 18461851 (2003).

Keywords

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor

  • Phuc Hong Than (a1), Kazuo Uchida (a1), Takahiro Makino (a2), Takeshi Ohshima (a2) and Shinji Nozaki (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed