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Effects of CF4 Addition on the Growth of Amorphous CNx Films by Plasma Decomposition of CH4-N2 Gas Mixtures

Published online by Cambridge University Press:  10 February 2011

T. Inokuma ,
H. Matsumoto ,
Y. Kurata  and
S. Hasegawa
T. Inokuma
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Ishikawa 920-1165, Japan.
H. Matsumoto
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Ishikawa 920-1165, Japan.
Y. Kurata
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Ishikawa 920-1165, Japan.
S. Hasegawa
Affiliation:
Department of Electrical and Computer Engineering, Kanazawa University, Kanazawa, Ishikawa 920-1165, Japan.
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Abstract

Hydrogenated amorphous carbon nitride (α-CNx:H) films are deposited at 50–300°C by radio-frequency plasma decomposition of CH4-CF4-N2 gas mixtures. Effects of fluorine radicals on the deposition rate, composition, and on chemical bonding are investigated. When CF4 gas is added as partial replacement of CH4 gas, the deposition rate at 200°C steeply increases with increasing flow rate ratio RCF = [CF4]/([CH4]+[CF4]) up to ∼0.3, and then it decreases gradually. It is found that the nitrogen content, x, increases from 0.22 to 0.46 when RCF increases from 0 to 0.75. The inclusion of fluorine atoms into the films is less than 5 at%. The infrared absorption spectra shows strong enhancement of the absorption bands related to various forms of C—N bonding by the CF4 addition. It is found that the addition of CF4enhances the formation of C–N bonds in PECVD α-CNx:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 505
Copyright
Copyright © Materials Research Society 2000

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References

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