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Effects Due to and Derived from Spontaneous Ordering in III-V Semiconductor Alloys

Published online by Cambridge University Press:  01 February 2011

Yong Zhang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, CO 80401, USA
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Abstract

Two interesting and important aspects of spontaneous CuPt ordering in III-V semiconductor alloys, which have only been investigated recently, are reviewed in this paper. The first aspect addresses the statistical effects that should be considered as the most unique consequence of the phenomenon of ordering, more specifically, how ordering affects the alloy fluctuations and hence the physical properties of the alloy. The second aspect tackles some intriguing properties of the domain twins of two CuPt ordered variants, specifically, considering the transmission of a ballistic electron beam through such a domain twin and its analogy to a highly interesting phenomenon, negative refraction, for light.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1 Suzuki, T., in Spontaneous Ordering in Semiconductor Alloys, edited by Mascarenhas, A. (Kluwer Academic/Plenum Publishers, New York, 2002), p. 1.Google Scholar
2 Norman, A. G., in Spontaneous Ordering in Semiconductor Alloys, edited by Mascarenhas, A. (Kluwer Academic/Plenum Publishers, New York, 2002), p. 45.Google Scholar
3 Stringfellow, G. B., in Spontaneous Ordering in Semiconductor Alloys, edited by Mascarenhas, A. (Kluwer Academic/Plenum Publishers, New York, 2002), p. 99.Google Scholar
4 Mascarenhas, A. and Zhang, Y., in Spontaneous Ordering in Semiconductor Alloys, edited by Mascarenhas, A. (Kluwer Academic/Plenum Publishers, New York, 2002), p. 283.Google Scholar
5 Wei, S.-H., in Spontaneous Ordering in Semiconductor Alloys, edited by Mascarenhas, A. (Kluwer Academic/Plenum Publishers, New York, 2002), p. 423.Google Scholar
6 Zhang, Y., Mascarenhas, A., and Wang, L. W., Phys. Rev. B 63, R201312 (2001).Google Scholar
7 Li, J. H., Moss, S. C., Zhang, Y., et al., Phys. Rev. Lett. 91, 106103 (2003).Google Scholar
8 Zhang, Y., Mascarenhas, A., Smith, S., et al., Phys. Rev. B 61, 9910 (2000).Google Scholar
9 Zhang, Y., Mascarenhas, A., and Wang, L. W., Phys. Rev. B 6412, 125207 (2001).Google Scholar
10 Mascarenhas, A., Zhang, Y., Alonso, R. G., et al., Solid State Commun. 100, 47 (1996).Google Scholar
11 Zhang, Y. and Mascarenhas, A., Phys. Rev. B 56, 9975 (1997).Google Scholar
12 Zhang, Y., Fluegel, B., and Mascarenhas, A., Phys. Rev. Lett. 91 (2003).Google Scholar
13 Veselago, V. G., Sov. Phys. Usp. 10, 509 (1968).Google Scholar
14 Kosaka, H., Kawashima, T., Tomita, A., et al., Phys. Rev. B 58, R10096 (1998).Google Scholar
15 Shelby, R. A., Smith, D. R., and Schultz, S., Science 292, 77 (2001).Google Scholar
16 Cubukcu, E., Aydin, K., Ozbay, E., et al., Nature 423, 604 (2003).Google Scholar
17 Capaz, R. B. and Koiller, B., Phys. Rev. B 47, R4044 (1993).Google Scholar
18 Meyer, D. C., Richter, K., Paufler, P., et al., Phys. Rev. B 59, 15253 (1999).Google Scholar
19 Smith, D. R., Padilla, W. J., Vier, D. C., et al., Phys. Rev. Lett. 84, 4184 (2000).Google Scholar
20 Notomi, M., Opt. Quantum Electron. 34, 133 (2002).Google Scholar
21 Luo, C., Johnson, S. G., Joannopoulos, J. D., et al., Optics Express 11, 746 (2003).Google Scholar
22 Notomi, M., Phys. Rev. B 62, 10696 (2000).Google Scholar
23 Lindell, I. V., Tretyakov, S. A., Nikoskinen, K. I., et al., Microw. Opt. Technol. Lett. 31, 129 (2001).Google Scholar
24 Zhang, Y., Fluegel, B., and Mascarenhas, A., unpublished. In fact, negative refraction was also observed at the interface of the bicrystal and air in our experiment.Google Scholar