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Effective p+-Doping of a-Si:H and a-Sic:H Layers by Plasma Assisted Boron Diffusion

Published online by Cambridge University Press:  28 February 2011

H.-D. Mohring ,
G. H. Bauer ,
G. Bilger  and
C. E. Nebel
H.-D. Mohring
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Fed. Rep. Germany
G. H. Bauer
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Fed. Rep. Germany
G. Bilger
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Fed. Rep. Germany
C. E. Nebel
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Fed. Rep. Germany
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Abstract

Doping of a-Si:H and a-SiC:H has been performed by plasma enhanced boron migration from thin (5–30 nm) Si0.2B0.8 layers on top of the substrate into the growing i-film. Transport coefficients for this plasma assisted diffusion (PAD) evaluated from SIMS profiles (D* = 10−15 … 10 cm2/s for a-Si:H, 10−15 cm2/s for a:SiC:H) by far exceed those for thermal diffusion after film deposition (10−21 cm2/s). Boron profiles are strongly governed by deposition parameters like substrate temperature, types and energies of radicals growing the film. Boron migration can be modelled assuming particle extraction from the network to the surface by bombardment of ions and atoms and high surface mobility of BHx radicals as a result from interaction with the plasma. Temperature dependent dark conductivity measurements show doping efficiencies comparable to B2H6 gas phase doping, but leaving plasma parameters optimized for i-film Leposition unchanged. Thin a-SiC:H layers are effectively p+-doped without affecting transmission, as no layer is optically detectable after PAD.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 331
Copyright
Copyright © Materials Research Society 1986

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References

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