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Effective electrochemical n-type doping of ZnO thin films for photovoltaic window applications

Published online by Cambridge University Press:  24 September 2013

B. Marí-Soucase ,
P. Cembrero-Coca ,
M. Mollar  and
M. E. Calixto
B. Marí-Soucase*
Affiliation:
Física Aplicada-IDF, Universitat Politècnica de València, València, Spain.
P. Cembrero-Coca
Affiliation:
Física Aplicada-IDF, Universitat Politècnica de València, València, Spain.
M. Mollar
Affiliation:
Física Aplicada-IDF, Universitat Politècnica de València, València, Spain.
M. E. Calixto
Affiliation:
Instituto de Física, Benemérita Universidad Autónoma de Puebla, Puebla, México.
*
*Email: bmari@fis.upv.es
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Abstract

An effective n-type doping of ZnO using Cl was demonstrated in thin films electrochemically synthetized by adding different amounts of chlorine ions in the starting electrolyte. The ratio between chlorine and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blue shift observed in the optical gap owing to the Burstein-Moss effect.

Keywords

electrodepositionII-VIelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 215 - 220
Copyright
Copyright © Materials Research Society 2013 

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References

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