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Effective Dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

  • Shinichi Kawamura (a1) (a2), Manabu Yoshida (a3), Satoshi Hoshino (a3) and Toshihide Kamata (a3)

Abstract

The relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the Rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.

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Effective Dopant Analysis for the High Performance Poly(3-Hexylthiophene) Field-Effect Transistors

  • Shinichi Kawamura (a1) (a2), Manabu Yoshida (a3), Satoshi Hoshino (a3) and Toshihide Kamata (a3)

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