Skip to main content Accessibility help
×
Home

Effect of Wettability of Poly Silicon on CMP Behavior

  • Young-Jae Kang (a1), Bong-Kyun Kang (a2), In-Kwon Kim (a3), Jin-Goo Park (a4), Yi-Koan Hong (a5), Sang-Yeob Han (a6), Seong-Kyu Yun (a7), Bo-Un Yoon (a8) and Chang-Ki Hong (a9)...

Abstract

The hydrophobicity of poly Si is reported to introduce different polishing behavior with careful control of post CMP cleaning process. The purpose of this study was to investigate the effect of poly Si wettability on its CMP behavior. The adhesion force of polymeric particle on the poly Si wafer surfaces was measured in the KOH solution (pH 11) as a function of solution A concentration. Adhesion force decreased and saturated as a function of concentration of solution A. The change of surface wettability affects not only the polishing rates but also the level of contamination on wafer because the interactions between particles and substrates are dependent on the wettability of the surface. Also, hydrophobic poly Si surfaces attracted much more pad particles with water marks than hydrophilic

Copyright

References

Hide All
1. Lee, J. D, Park, Y. R., Yoon, B. U., Han, Y. P., Hah, S. R, Moon, J. T., J. Electrochem. Soc., 149 (8) G477–G481 (2002)
2. Yassen, A. A., Mourlas, N. J., Mehregany, M., J. Electrochem. Soc., 144 (1) 237242 (1997)
3. Chen, H. R., , C, , Gau, Dai, B. T., Tsai, M. S., Sensors and Actuators A 108 8690 (2003)
4. Kim, K. N. et al. ,, Symposium on VLSI Technology Digest of Technical Paper, p. 1617, (1998)
5. Freitas, A. M. and Sharma, M. M., J. Colloid. Interface. Sci., 233, 73 (2001)
6. Park, J. G. and Pas, M. F., J. Electrochem. Soc. 142, 6 (1995)

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed