Hostname: page-component-5c6d5d7d68-txr5j Total loading time: 0 Render date: 2024-08-15T23:01:29.722Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of TiW As Adhesion Layer And Underlying Metal On Electromigration Characteristics of Tungsten Via Plugs

Published online by Cambridge University Press:  21 February 2011

Kamesh Gadepally ,
Padala Krishna Reddy ,
Siew Niew ,
Richard Merrill ,
Rajeeva Lahri  and
Madan Biswal
Kamesh Gadepally
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Padala Krishna Reddy
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Siew Niew
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Richard Merrill
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Rajeeva Lahri
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Madan Biswal
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Get access

Abstract

The use of Tungsten plug technology to obtain good step coverage in vias and contacts is a well know fact. The effect of TiW as an adhesion layer between the plug and the overlying Aluminum is shown in this paper to have a significant impact on the electromigration characteristics of this scheme. A comparison between plug and non-plug technology is also made keeping the aspect ratios the same. Also discussed in this paper will be the effect of the first metal (Tungsten vs Aluminum) on electromigration characteristics. Constant current DC electromigration stressing was performed on via chains and the results are discussed. Discussed, also, are SEM cross sections (XSEM) of the stressed vias indicating the failure modes. An idealized metal scheme will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 161
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kahn, H. and Thompson, C.V., Mat.Res.Soc.Symp. Proc., 225, 15, (1991).CrossRefGoogle Scholar
2. Kwok, T., Nguyen, T., Ho, P., and Yip, S., IEEE/IRPS Proc., 130, (1987)Google Scholar
3. Weide, K., and Hasse, W., IEEE/LRPS Proc., 361, (1992).Google Scholar
4. Wolbert, P., “Modeling and Simulation of Semiconductor Devices in TRENDY - ElectricAl, ThermAl, and Hydrodynamic Behavior” Met lit. opg. - Met samenvatting in het Nederlands, - Proefshrift Enschede. ISBN 90-9004446-9, 157, (1990).Google Scholar
5. Enver, A. and Clement, J. J., IEEE/VMIC Proc., 149, (1990)Google Scholar
6. Yamaha, T., Naitou, M., and Hotta, T., IEEE/IRPS Proc., 349, (1992).Google Scholar
7. Tao, J., Young, K. K., Pico, C.A., Cheung, N.W., and Hu, C.M., IEEE/Elec. Dev. Letts, 12, 12, 646, 1991.Google Scholar
8. Yue, J., SEMI Presentation, March 1993.Google Scholar
9. Tao, J., Young, K. K., Cheung, N.W., and Hu, C.M., IEEE/IRPS, Proc., 338, 1992.Google Scholar
10. Pimbley, J. M. and Brown, D. M., IEEE/Transac. Elec.Dev., ED- 33, 9, 1399, (1986).Google Scholar