Hostname: page-component-7479d7b7d-m9pkr Total loading time: 0 Render date: 2024-07-12T04:29:16.787Z Has data issue: false hasContentIssue false

Effect of Surface Passivation on Stability of Luminescence from Nanocrystalline Silicon Particles in Pure Water

Published online by Cambridge University Press:  01 February 2011

Masaki Hiruoka
Affiliation:
Tokyo Denki University, Department of Electronic and Computer Engineering, Ishizaka, Hatoyama, Hikigun, Saitama, 350-0394, Japan, +81-49-296-2911, +81-49-296-6413
Keisuke Sato
Affiliation:
sato@f.dendai.ac.jp, Tokyo Denki University, Department of Electronic and Computer Engineering, Ishizaka, Hatoyama, Hiki gun, Saitama, 350-0394, Japan
Kenji Hirakuri
Affiliation:
hirakuri@f.dendai.ac.jp, Tokyo Denki University, Department of Electronic and Computer Engineering, Ishizaka, Hatoyama, Hikigun, Saitama, 350-0394, Japan
Get access

Abstract

We have investigated the stability of luminescence in pure water from a nanocrystalline silicon (nc-Si) particles passivated with various chemical elements such as a hydrogen, carbon and oxygen atoms. Each sample emitted red light with a peak wavelength in a range from 690 to 800 nm. When the hydrogen- and/or carbon-passivated samples were immersed in pure water, the intensity of red luminescence was decreased by aging after a short period of time. At the same time, the peak wavelength was also shifted toward shorter wavelength. These were caused by the generation of defects (Pb-centers) and the reduction of particle size due to the desorption of hydrogen and/or carbon atoms and the replacement from the Si-H and/or Si-C bonds to the Si-O bond, respectively, at the surface of nc-Si particles. On the other hand, the oxygen-passivated sample showed stable luminescence in addition to the slight blue-shift of peak wavelength under the immersion in pure water for 400 hours. The good stability was attributed to the formation of stable surface condition. These results are a strong indication that the stability of the luminescence in pure water can be remarkably improved by the oxygen-passivation to the surface of nc-Si particles.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Yang, C-S., Kauzlarich, S. M., Wang, Y. C. and Lee, H. W. H., J. Clust. Sci. 11, 423 (2000).Google Scholar
3. Archer, M., Christophersen, M. and Fauchet, P. M., Biomedical Microdevices 63, 203 (2004).Google Scholar
4. Yue, G., Yan, B., Yang, J. and Guha, S., Appl. Phys. Lett. 86, 092103 (2005).Google Scholar
5. Negishi, N., Nakada, T., Sakemura, K., Okuda, Y., Satoh, H., Watanebe, A., Yoshikawa, T., Ogasawara, K. and Koshida, N., J. Vac. Sci. Technol. B 23, 682 (2005).Google Scholar
6. Lin, G-R., Lin, C-J., Lin, C-K., Chou, L-J. and Chueh, Y-L., J. Appl. Phys. 97, 094306 (2005).Google Scholar
7. Jambois, O., Rinnert, H., Devaux, X. and Vergnat, M., J. Appl. Phys. 98, 046105 (2005).Google Scholar
8. Shinoda, K., Yanagisawa, S., Sato, K. and Hirakuri, K., J. Crystal Growth 288, 84 (2006).Google Scholar
9. Sato, K. and Hirakuri, K., J. Appl. Phys. (in press).Google Scholar
10. Sato, K., Izumi, T., Iwase, M., Show, Y., Morisaki, H., Yaguchi, T. and Kamino, T., Appl. Sur. Sci. 216, 376 (2003).Google Scholar
11. Theiβ, W., Surf. Sci. Rep. 29, 91 (1997).Google Scholar
12. Bhagat, S. D. and Rao, A. V., Appl. Sur. Sci. 252, 4289 (2006).Google Scholar
13. Sato, K. and Hirakuri, K., J. Vac. Sci. Technol. B 24, 604 (2006).Google Scholar
14. Sato, K. and Hirakuri, K., J. Appl. Phys. 97, 104326 (2005).Google Scholar