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Effect of Surface Morphology of NiCr-Bottom Electrode on Preparation of Ferroelectric PZT Thin Film Capacitor

Published online by Cambridge University Press:  10 February 2011

K.B. Lee ,
B.R. Rhee  and
S.K. Cho
K.B. Lee
Affiliation:
Department of Physics, Sangji University. Wonju, Korea 220–702
B.R. Rhee
Affiliation:
Department of Physics, Sangji University. Wonju, Korea 220–702
S.K. Cho
Affiliation:
Department of Chemistry, Sangji University, Wonju, Korea 220–702
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Abstract

We have studied the optimum conditions of the deposition of NiCr-bottom electrode for preparing the ferroelectric PZT(50/50) thin film capacitor. The NiCr(80/20) layer of about 300nm in thickness was deposited on bare Si(111) wafer by rf magnetron sputtering. The surface morphology and crystallinity were investigated by using Atomic force microscope (AFM) and X-ray diffractormeter (XRD). It is found that the size and crystallinity of grains of NiCr or Ni-silicide depend mainly on the rf power. The PZT(50/50) thin films were prepared on NiCr/Si substates by spin-casting of PZT coating sol and then annealing at 520°C in air for crystallization. The undesirable Pb-silicate is found to be grown during post-annealing in case that substrates having NiCr layer deposited by high power above 80 W are used. We suggest that the formation of Pb-silicate is due to the thermal diffusion of Pb or PbO through crystalline NiCr-grain boundaries. The ferroelectric PZT thin films having the perovskite structure can be obtained by using the NiCr-bottom electrodes whose morphologies are in the amorphous-crystalline boundaries, in which the surface roughness and grain size of NiCr layer is minimum. The values of the dielectric constant, εn, were measured in the range 300˜500, the remanent polarization, Pr, in the range 10˜13 C/cm2 and the coercive field, Ec, around 160 kV/cm, depending on the deposition conditions of NiCr layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 181
Copyright
Copyright © Materials Research Society 1996

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References

1. Haertling, G. H., J. Vac. Sci. Technol. A9, 414(1991).Google Scholar
2. Yoo, I. K. and Desu, Seshu B., Phil. Mag. B69, 461(1994).Google Scholar
3. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Jpn. J. Appl. Phys. 33, 5207(1994).Google Scholar
4. Ramesh, R., Chan, W. K., Gilchrist, H., Wilkens, B., Sands, T., Tarascon, J. M., Keramidas, V. G., Evans, J. T. Jr., Gealy, F. D. and Fork, D. K. in Ferroelectric Thin Films II, edited by Kingon, Angus I., Myers, Edward R. and Tuttle, Bruce (Mater. Res. Soc. Symp. Proc. 243, Boston, MA, Dec., 1991)pp. 477–487.Google Scholar
5. Jhang, J., Cui, Guang-J., Gordon, D., Bursirk, P. V. and Steinbeck, J. in Ferroelectric Thin Films III, edited by Myers, Edward R., Tuttle, Bruce A., Desu, Seshu B. and Larsen, Poul K. (Mater. Res. Soc. Symp. Proc. 310, San Francisco, CA, 1993)pp. 249–254.Google Scholar
6. Ogawa, T., Shindou, S., Senda, A. and Kasanami, T. in Ferroelectric Thin Films II, edited by Kingon, Angus I., Myers, Edward R. and Tuttle, Bruce (Mater. Res. Soc. Symp. Proc. 243, Boston, MA, Dec., 1991)pp. 93–99.Google Scholar
7. Ogawa, T., U. S. Patent 5088002 (1992).Google Scholar
8. Thornton, J. A., J. Vac. Sci. Technol. 11, 666(1974).Google Scholar
9. Eichorst, Dennis J. and Baron, Cynthia J. in Ferroelectric Thin Films III, edited by Myers, Edward R., Tuttle, Bruce A., Desu, Seshu B. and Larsen, Poul K. (Mater. Res. Soc. Symp. Proc. 310, San Francisco, CA, 1993)pp. 201–208.Google Scholar
10. Cha, S. Y., Lee, H. C., Lee, W. J. and Kim, H. G., Jpn. J. Appl. Phys. 34, 5220(1995).Google Scholar