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The Effect of Surface Layers in Epitaxial N-Type Hg1−xCdxTe

Published online by Cambridge University Press:  21 February 2011

K.K. Parat ,
N.R. Taskar ,
I.B. Bhat  and
S.K. Ghandhi
K.K. Parat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
N.R. Taskar
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
I.B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
S.K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The presence of low mobility surface electrons on n-Hg1−1CdxTe is generally not apparent in the temperature dependence of the Hall Coefficient (RH) or the Hall mobility (µH) of the layer. However, its influence is clearly seen in the magnetic field (B-field) dependence of RH. The B-field dependence of RH can be analyzed to extract the bulk and surface carrier concentrations and their respective mobilities.

This diagnostic technique has been used for evaluating epitaxial Hg1−xCdxTe layers grown by organometallic vapor phase epitaxy (OMVPE), which have been converted to n-type by annealing in Hg overpressure. In addition, the effect of anodic sulfide passivation on the B-field dependence of Hall coefficient is also outlined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 271
Copyright
Copyright © Materials Research Society 1990

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References

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