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Effect of Substrate Variation on Electrical and Magnetic Properties of Mn Doped ZnO of Dilute Magnetic Semiconductors

Published online by Cambridge University Press:  01 February 2011

Srikanth Manchiraju ,
Govind Mundada ,
Ted Kehl ,
Craig Vera ,
Rishi Patel ,
Pawan Kahol  and
Kartik Ghosh
Srikanth Manchiraju
Affiliation:
kanthmsri@yahoo.co.in, Missouri State University, Physics, Astronomy and Materials Science, 901, S.National Ave, Springfield, Missouri, 65802, United States, 417-836-3207
Govind Mundada
Affiliation:
gov201@missouristate.edu, Missouri State University, Physics, Astronomy and Materials Science, United States
Ted Kehl
Affiliation:
twk178s@smsu.edu, Missouri State University, Physics, Astronomy and Materials Science, United States
Craig Vera
Affiliation:
cjv767s@smsu.edu, Missouri State University, Physics, Astronomy and Materials Science, United States
Rishi Patel
Affiliation:
rjp549t@MissouriState.edu, Missouri State University, Centre for Applied Science and Engineering, United States
Pawan Kahol
Affiliation:
pkk757f@MissouriState.edu, Missouri State University, Physics, Astronomy and Materials Science, United States
Kartik Ghosh
Affiliation:
kag125f@MissouriState.edu, Missouri State University, Physics, Astronomy and Materials Science, United States
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Abstract

In this paper, the effect of substrate on the domain structure growth and electrical and magnetic properties of epitaxial Mn-doped Zn0.8Mn0.15O (ZnMnO) thin films has been investigated. Epitaxial thin films of ZnMnO dilute magnetic semiconductors (DMS) were grown on various substrates such as single crystal sapphire, single crystal silicon, and quartz substrates using Pulsed Laser Deposition (PLD) technique . Structural, surface, magnetic, and optical properties have been observed on these films using X-Ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and Raman spectroscopy. X-Ray Diffraction shows that films are highly epitaxial and c-axis oriented with some induced strain. AFM images show that film surface is smooth with RMS roughness of the order of 1-2 nm over 5*5sq.micron. Magnetic characteristic properties such as carrier concentration, mobility, and temperature dependent resistivity were also investigated. Carrier concentration decreases and mobility increases for both the films on silicon and quartz substrates when compared to film on sapphire.

Keywords

magneticsemiconductingspintronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-07
Copyright
Copyright © Materials Research Society 2006

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References

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