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The Effect of Sm, Eu and Yb on the Thermoelectric Properties of Th3P4,-Type Lanthanum Sulfide

Published online by Cambridge University Press:  25 February 2011

J. F. Nakahara ,
B. J. Beaudry ,
K. A. Gschneidner Jr. ,
T. Takeshita  and
Ames Laboratory
J. F. Nakahara
Affiliation:
Iowa State University, Ames, IA 50011
B. J. Beaudry
Affiliation:
Iowa State University, Ames, IA 50011
K. A. Gschneidner Jr.
Affiliation:
Also Department of Materials Science and Engineering
T. Takeshita
Affiliation:
Present address: Mitsubishi Metal Corp. Ltd., 1-297 Kitabukuro-cho, Omiya, Saitama, Japan
Ames Laboratory
Affiliation:
Supported by the U. S. Department of Energy, Office of Defense Energy Projects and Special Applications, Office of Nuclear Energy, under contract no. W-7405-ENG-82
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Abstract

The Th3P4-type lanthanum sulfides are n-type semiconductors and a continuous series of solid solutions is found between the compositions of La3S4 and La2S3. These materials are attractive for use in high temperature thermoelectric applications because of their high melting points, low thermal conductivities and their inherent ability to vary the electron concentration from a maximum of 6.02 × 1021 cm−3 for La3S4 to zero for La2S3 (i.e., self-doping). In this study, La3S4 compounds in which trivalent La has been partially substituted by divalent Sm, Eu or Yb (La3−xMxS4 , x = 0.1 to 0.9) have been prepared by the pressure assisted reaction sintering method and were found to have the Th3P4 structure. The thermoelectric properties (Seebeck coefficient and electrical resistivity) were measured as a function of temperature and the optimum composition was found for x between 0.2 and 0.3 in which the electrical power factor was a maximum at 1000°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 379
Copyright
Copyright © Materials Research Society 1987

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References

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