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Effect of SC-1 Process Parameters on Particle Removal and Surface Metallic Contamination

Published online by Cambridge University Press:  15 February 2011

R. Mark Hall ,
John J. Rosato ,
Taura Jarvis ,
Thad Parry  and
Paul G. Lindquist
R. Mark Hall
Affiliation:
Santa Clara Plastics, 400 Benjamin lane, Boise, ID 83704
John J. Rosato
Affiliation:
Santa Clara Plastics, 400 Benjamin lane, Boise, ID 83704
Taura Jarvis
Affiliation:
Santa Clara Plastics, 400 Benjamin lane, Boise, ID 83704
Thad Parry
Affiliation:
Santa Clara Plastics, 400 Benjamin lane, Boise, ID 83704
Paul G. Lindquist
Affiliation:
Santa Clara Plastics, 400 Benjamin lane, Boise, ID 83704
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Abstract

The effect of bath temperature, megasonic power, and NH4-OH:H2O ratio are studied for particle removal efficiency, surface roughness, and surface Fe concentration in SC-1 cleaning solutions. Experimental results are presented which show removal efficiencies better than 97% on bare silicon wafers for optimized process conditions. These results are related to the etch rate of thermal oxides and a model is developed for reducing surface roughness and minimizing Fe contamination levels while maximizing particle removal efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 127
Copyright
Copyright © Materials Research Society 1995

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References

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