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Effect of Residual Phosphorus on Amorphous Silicon Thin Film Transistors

Published online by Cambridge University Press:  25 February 2011

Hiroshi Tsutsu ,
Tetsuya Kawamura  and
Yutaka Miyata
Hiroshi Tsutsu
Affiliation:
Display Technology Research Laboratory, Audio Video Research Center, Matsushita Electric Industrial Co., Ltd. 3–15, Yagumo-Nakamachi, Moriguchi, Osaka 570, JAPAN
Tetsuya Kawamura
Affiliation:
Display Technology Research Laboratory, Audio Video Research Center, Matsushita Electric Industrial Co., Ltd. 3–15, Yagumo-Nakamachi, Moriguchi, Osaka 570, JAPAN
Yutaka Miyata
Affiliation:
Display Technology Research Laboratory, Audio Video Research Center, Matsushita Electric Industrial Co., Ltd. 3–15, Yagumo-Nakamachi, Moriguchi, Osaka 570, JAPAN
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Abstract

Effects of residual phosphorus in the channel region of amorphous silicon thin film transistors(a-Si TFTs) on the TFT characteristics were quantitatively investigated. Concentration and the depth profile of the residual phosphorus were measured by high resolution secondary ion mass spectroscopy(SIMS). The OFF characteristics of a-Si TFTs were also measured.

The SIMS data showed that the phosphorus exists about 100nm deep into intrinsic a-Si(i-a-Si), but the OFF characteristics showed that the activity of the residual phosphorus is 4 order of magnitude lower than that of heavily phosphorus doped a-Si(+-a-Si). The residual phosphorus is found to be inactive and stable, and has little effect on a-Si TFT characteristics.

These results enabled us to fabricate inverted staggered a-Si TFTs by the simplest process using only 2 photo-mask steps and 1 self-aligned exposure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 379
Copyright
Copyright © Materials Research Society 1990

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References

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