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The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures

Published online by Cambridge University Press:  28 February 2011

Julia M. Phillips ,
J. L. Batstone  and
L. Pfeiffer
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We present evidence on the types of structural changes caused by the rapid thermal annealing of two types of heteroepitaxial layers: CaF2/CoSi2/Si(111) and Si(100) on A12O3 (1102). We find that grains in a film can be merged into a single crystal and that the microtwin density can be dramatically lowered. We also find a number of changes in the structure of the heteroepitaxial interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 365
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Pfeiffer, L., Phillips, J. M., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).Google Scholar
2. Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., and Cho, A. Y., Appl. Phys. Lett. 49, 815 (1986).Google Scholar
3. Tu, C. W., Beggy, J. C., Baiocchi, F. A., Pearton, S. J., Hsieh, S. J., Kopf, R. F., Caruso, R., and Jordan, A. S., this volume.Google Scholar
4. Pfeiffer, L., Phillips, J. M., Luther, K. E., West, K. W., Batstone, J. L., Stevie, F. A., Maurits, J. E. A., Appl. Phys. Lett. 50, 466 (1987).Google Scholar
5. Phillips, J. M. and Augustyniak, W. M., Appl. Phys. Lett. 48, 463 (1986).Google Scholar
6. Ponce, F. A., Appl. Phys. Lett. 41, 371 (1982).Google Scholar