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The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures

  • Julia M. Phillips (a1), J. L. Batstone (a1) and L. Pfeiffer (a1)

Abstract

We present evidence on the types of structural changes caused by the rapid thermal annealing of two types of heteroepitaxial layers: CaF2/CoSi2/Si(111) and Si(100) on A12O3 (1102). We find that grains in a film can be merged into a single crystal and that the microtwin density can be dramatically lowered. We also find a number of changes in the structure of the heteroepitaxial interfaces.

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1. Pfeiffer, L., Phillips, J. M., Smith, T. P. III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985).
2. Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., and Cho, A. Y., Appl. Phys. Lett. 49, 815 (1986).
3. Tu, C. W., Beggy, J. C., Baiocchi, F. A., Pearton, S. J., Hsieh, S. J., Kopf, R. F., Caruso, R., and Jordan, A. S., this volume.
4. Pfeiffer, L., Phillips, J. M., Luther, K. E., West, K. W., Batstone, J. L., Stevie, F. A., Maurits, J. E. A., Appl. Phys. Lett. 50, 466 (1987).
5. Phillips, J. M. and Augustyniak, W. M., Appl. Phys. Lett. 48, 463 (1986).
6. Ponce, F. A., Appl. Phys. Lett. 41, 371 (1982).

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