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The effect of processing conditions on the structure of buried interfaces between silicon and silicon dioxide

  • Xidong Chen (a1) and J. Murray Gibson (a1)

Abstract

A transmission electron microscope technique is used to image atomic steps at buried interfaces between silicon and silicon dioxide. We have studied the effect of processing conditions on the interfacial structure of Si/SiO2 with this technique. We observed a dramatic effect of post-oxidation annealing on silicon (100). Roughening of Si(111) interfaces due to chemical preparation is also reported.

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2 Chen, X., Gibson, J. M., in preparation for publication.
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8 Chen, X., Gibson, J. M., submitted for publication in Appl. Phys. Lett.

The effect of processing conditions on the structure of buried interfaces between silicon and silicon dioxide

  • Xidong Chen (a1) and J. Murray Gibson (a1)

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