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The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation

  • S. Chittipeddi (a1), C. M. Dziuba (a1), M. J. Kelly (a1), V. C. Kannan (a1), R. B. Irwin (a1), P. M. Kahora (a1) and W. T. Cochran (a1)...

Abstract

In this work we have studied the effect of polysilicon doping on titanium disilicide (TiSi2) formation using extensive physical and electrical characterization.

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[9] Irwin, R. B., Chittipeddi, S., in private communications.

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