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The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation

  • S. Chittipeddi (a1), C. M. Dziuba (a1), M. J. Kelly (a1), V. C. Kannan (a1), R. B. Irwin (a1), P. M. Kahora (a1) and W. T. Cochran (a1)...


In this work we have studied the effect of polysilicon doping on titanium disilicide (TiSi2) formation using extensive physical and electrical characterization.



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[1] Murarica, S. P.. J. Vac. Sci. Tech., V 17, pp 775780 (1980).
[2] Vaidya, S., Murarka, S. P., and Sheng, T. T., J. Appl. Phys., 58 (2), pp 972978 (1980).
[3] Osburn, C. M., Tsai, M. Y., Roberts, S., Luchese, C. J., and Ting, C. Y., in VLSI Science and Technology, ed. Dell'Oca, C. J. and Bullis, W. M. (Electrochemical Society, Princeton. NJ, 1982) pp 213
[4] Revesz, P., Gyimesi, J., and Zsololdos, E., J. Appl. Phys., 54, 1860 (1983).
[5] Cochran, Bill, Semiconductor International, pp. 146148 (1991).
[6] Amano, J., Merchant, P., Cass, T. R., Miller, J. N., Koch, T., J. Appl. Phys., 59 (8), 2689 (1986).
[7] Chow, T. P., Katz, W., and Smith, G., Appl. Phys. Lett., 46 (1), 41 (1985).
[8] Chittipeddi, S., Roy, P. K., Velaga, A. N., U. S. Patent Application filed 08/91.
[9] Irwin, R. B., Chittipeddi, S., in private communications.


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