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Effect of PLT Buffer Layers on the PZT Thin Films for Scaling-Down Ferroelectric Materials

  • Li Dong Hua (a1), Eun Sun Lee (a2), Hyun Woo Chung (a3), Byung Du Ahn (a4) and Sang Yeol Lee (a5)...

Abstract

The Hysteresis characteristics of below 400 nm- thick Pb(Zr0.52Ti0.48)O3 (PZT) thin films grown on Pt (111) /Ti/SiO2/Si substrates have showed very poor with remanent polarization of 1∼3 μC/cm2 in our previous research. To study the further scaling-down, we introduced the method of our previous research that the (Pb0.72La0.28)Ti0.94O3 (PLT) buffer layers play an important role in enhancing the ferroelectric properties of the PZT thin films. As a result, the remanent polarization of 300 nm-thick PZT thin films with the 10 nm-thick PLT buffer layers have showed 32 μC/cm2 at applied voltage of 8 V and 24 μC/cm2 at applied voltage of 5 V. Inserted the PLT seed layers between the PZT thin films and substrate, the hysteresis characteristics of PZT thin films were improved a lot. The dielectric and leakage current properties of PZT thin films were also investigated.

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1 Takasu, H., Integr. Ferroelectr. 14, 1 (1997).
2 Kotechi, D. E., Integr. Ferroelectr. 16, 1 (1997).
3 Lee, E. S., Chung, H. W., Lim, S. H. and Lee, S. Y., Appl. Phys. Lett. 86, 032903 (2005).
4 Han, K. B., Kim, C. S., Jeon, C. H., Jhon, H. S., and Lee, S. Y., Mat. Sci. Eng. B. 109, 170 (2003).

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