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The effect of periodic silane burst on the properties of GaN on Si (111) substrates

Published online by Cambridge University Press:  01 February 2011

K. Y. Zang ,
S. J. Chua ,
C. V. Thompson ,
L. S. Wang ,
S. Tripathy  and
S. Y. Chow
K. Y. Zang
Affiliation:
Singapore-MIT Alliance, E4–04–10, NUS, 4 Engineering Drive 3, 117576, Singapore
S. J. Chua
Affiliation:
Singapore-MIT Alliance, E4–04–10, NUS, 4 Engineering Drive 3, 117576, Singapore Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
C. V. Thompson
Affiliation:
Singapore-MIT Alliance, E4–04–10, NUS, 4 Engineering Drive 3, 117576, Singapore Department of Materials Science and Engineering, MIT, Cambridge, MA 02139, USA
L. S. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
S. Tripathy
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
S. Y. Chow
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, 117602, Singapore
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Abstract

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.33
Copyright
Copyright © Materials Research Society 2005

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References

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