Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T03:37:46.838Z Has data issue: false hasContentIssue false

Effect of Oxygen Annealing on Low-Resistivity Contactsfor High-Tc Superconductors*

Published online by Cambridge University Press:  28 February 2011

J. W. Ekin
Affiliation:
Electromagnetic Technology Division, National Bureau of Standards, Boulder, CO 80303
A. J. Panson
Affiliation:
Westinghouse Research & Development Center, Pittsburgh, PA 15235
B. A. Blankenship
Affiliation:
Westinghouse Research & Development Center, Pittsburgh, PA 15235
Get access

Abstract

A method for making low resistivity contacts to high-Tc superconductors has been developed, consisting of depositing noble metal contact pads (silver or gold) on a clean superconductor surface at low temperatures (<150°C). After annealing the silver contact pads in oxygen at intermediate temperatures (<500°C) for one hour, contact resistivities less than 2 × 10'° Ω-cm2 at 76 K are obtained, about six orders of magnitude less than for indium-solder contacts. Before annealing, the contact resistivities are still very low, in the 10-6 to 10-5 Ω-cm range at 76 K, which would be useful when contacts with low fabrication temperatures are required. The voltage-current characteristics of the contacts are strongly nonlinear after annealing, having a superconducting transition character. This is ascribed to the critical current of the superconducting material being exceeded at the contact interface. External connections to the contact pads have been made using both solder and thermosonic wire-bonding techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Contribution of NBS, not subject to copyright.

References

REFERENCES

1. Ekin, J. W., Panson, A. J., and Blankenship, B. A., Appl. Phys. Letters 52 (1988), in press.Google Scholar
2. Panson, A. J., Braginski, A. I., Gavaler, J. R., Hulm, J. K., Janocko, M. A., Pohl, H. C., Stewart, A. M., Talvacchio, J., and Wagner, G. R., Phys. Rev. B35, 8774 (1987).Google Scholar
3. Ekin, J. W., Braginski, A. I., Panson, A. J., Janocko, M. A., Capone, D. W. II, Zaluzec, N. J., Flandermeyer, B., de Lima, O. F., Hong, M., Kwo, J., Liou, S. H., Jour. Appl. Phys. 62, 4821 (1987).Google Scholar
4. Tzeng, Y., Holt, A., and Ely, R., Appl. Phys. Letters 52 (1988), in press.Google Scholar