Skip to main content Accessibility help

Effect of n doped amorphous layer between microcrystalline i/n layer on the performance of micromorph tandem solar cells

  • Jingjing Yang (a1), Tingkai Li (a1), Xueshi Tan (a1), Feng Zhang (a1) and Bingxue Mao (a1)...


Pin/pin “micromorph” tandem solar cells were manufactured by the industrial production line of Hunan Gongchuang PV Science & Technology Co., Ltd. Based on this kind of solar cells, a n-doped amorphous silicon layer deposited by plasma enhanced chemical vapor deposition technique (PECVD) was inserted between the microcrystalline silicon intrinsic layer and n-doped layer. The result showed that the introduced n-type amorphous silicon layer well improved the solar cells performance by reducing the bad effects caused by microcrystalline silicon growth defects. Compared with the solar cells without inserting the n-doped amorphous silicon layer, the open voltage and efficiency increased remarkably. When the thickness of n-doped amorphous silicon layer is 8nm, the open voltage increased from 72.9V to 73.6V and efficiency increased from 10.63% to 10.74%.



Hide All
1. Tortes, P, Meier, J, HIÜckiger, R, Kroll, U, Selvan, J.A.A, Kepper, H, Shah, A, Littlewood, S.D, Kelly, I.E, Giannoul è s, P, Appl. Phy. Lett. 69 p1373 (1996).
2. Meier, J, Duball, S, Golay, S, Kroll, U., Faÿ, S., Vallat-Sauvain, E., Feitknecht, L., Dubaill, J., Shah, A., Solar Energy Matedals and Solar Cells, 74 p457 (2002).
3. Rech, B., Kluth, O., Repmann, T., Roschek, T., Springer, J., Muller, J., Finger, F., Stiebig, H., Wagner, H., Solar Energy Materials & Solar Cells, 74 p439447 (2002).
4. Nasuno, Y, Kondo, M, Matsuda, A, Soal Energy Materials & Solar Cells 74 p497503 (2002).
5. Meier, J., Dubail, S., Fluckiger, R., Fischer, D., Keppner, H., Shah, A., Proc. 1st WCPEC, Hawaii, USA, 1 p409412 (1994).
6. Aafk e Cecile Bronneberg, Plasma Processing of Microcrystalline Silicon Films: Filling in the Gaps [D]. Eindhoven: Eindhoven University of Technology p12 (2012) .
7. Shah J. Meier, A.V., Feitknecht, L., Vallat-Sauvain, E., Bailat, J., Graf, U., Dubail, S. and Droz, C.,17th EC Photovoltaic Solar Energy Conference, vol.III p2823 (2001).
8. Zhan, Xiaodan, Zhao, Ying, Zhu, Feng, Wei, Changchun, Wu, Chunya, Gao, Yantao, Sun, Jian, Hou, Guofu, Geng, Xinhua, Xiong, Shaozhen, Journal of Syntheic Crystals, 33 (6) p960964 (2004).
9. Zhan, Xiaodan, Zhao, Ying, Changchun Wei, Feng Zhu, Gao, Yantao, Sun, Jian, Hou, Guofu, Xue, Junming, Geng, Xinhua, Xiong, Shaozhen, Chinese Journal of Semiconductors, 26 (5) p952956 (2005).
10. Bailat, J., Vallat-Sauvain, E., Feitknecht, L., Droz, C., Shah, A., Journal of Non-Crystalline Solids, 299–302 p390-394 (2002).
11. Python, M., Madani, O., Domine´, D., Meillaud, F., Vallat-Sauvain l, E., Ballif, C., Solar Energy Materials & Solar Cells, 93 p17141720 (2009).
12. Martin Python Evelyne Vallat-Sauvain, Bailat, Julien, Domine, Didier, Fesquet, Luc, Shah, Arvind, Ballif, Christophe. Journal of Non-Crystalline Solids, 354 p1925 (2008).
13. Zhan, Xiaodan, Zhao, Ying, Feng Zhu, Yantao Gao, Wei, Changchun, Sun, Jian, Wang, Yan, Geng, Xinhua, Xiong, Shaozhen, Acta Physica Sinica, 54 (4) p18991902 (2005)



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed