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Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

  • Daewon Kwon (a1), J. David Cohen (a1), Brent P. Nelson (a2) and Eugene Iwaniczko (a2)

Abstract

We present the results of studies on the defect properties and the effect of light soaking for various hot wire deposited (HW) films. We employ junction capacitance measurements together with the transient photocapacitance spectroscopy to measure the deep defect densities in as-grown state (state A) and in light soaked state (state B). Good agreement is found between the defect densities measured from both measurements. The HW film with a hydrogen content of 10 – 12 at.% shows physical characteristics and defect densities similar to conventional PECVD films. The HW films with hydrogen content, CH, in the range 2 – 9 at.% show a smaller defect density in state B than the defect density of the film with higher CH. However, the film with a hydrogen level of less than 1 at.% exhibits markedly inferior physical properties.

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Effect of Light Soaking on Hot Wire Deposited a-Si:H Films

  • Daewon Kwon (a1), J. David Cohen (a1), Brent P. Nelson (a2) and Eugene Iwaniczko (a2)

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