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The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures

Published online by Cambridge University Press:  15 February 2011

J. M. Glasko ,
J. Zou ,
D. J. H. Cockayne ,
J. Fitz Gerald ,
P. KringhøJ  and
R. G. Elliman
J. M. Glasko
Affiliation:
Electronic Materials Engineering Department, R.S.Phys.S.E., Institute of Advanced Study, Australian National University, Canberra, A.C.T. 0200, Australia
J. Zou
Affiliation:
Electron Microscopy Unit, University of Sydney, Sydney, N.S.W. 2006, Australia
D. J. H. Cockayne
Affiliation:
Electron Microscopy Unit, University of Sydney, Sydney, N.S.W. 2006, Australia
J. Fitz Gerald
Affiliation:
Petrophysics Group, R. S. E. S., Institute of Advanced Studies, Australian National University, Canberra, A.C.T. 0200, Australia
P. KringhøJ
Affiliation:
Institute of Physics and Astronomy, Aarhus University, DK-8000 Aarhus-C, Denmark
R. G. Elliman
Affiliation:
Electronic Materials Engineering Department, R.S.Phys.S.E., Institute of Advanced Study, Australian National University, Canberra, A.C.T. 0200, Australia
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Abstract

This study examined the effect of ion irradiation and subsequent thermal annealing on GeSi/Si strained-layer heterostructures. Comparison between samples irradiated at 253°C with low energy (23 keV) and high energy (1.0 MeV) Si ions showed that damage within the alloy layer increases the strain whereas irradiation through the layer/substrate interface decreases the strain. Loop-like defects formed at the GeSi/Si interface during high energy irradiation and interacting segments of these defects were shown to have edge character with Burgers vector a/2<110>. These defects are believed responsible for the observed strain relief. Irradiation was also shown to affect strain relaxation kinetics and defect morphologies during subsequent thermal annealing. For example, after annealing to 900°C, un-irradiated material contained thermally-induced misfit dislocations, while ion-irradiated samples showed no such dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 367
Copyright
Copyright © Materials Research Society 1997

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