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Effect Of Increasing Growth Rates on Film Properties and Device Performance for DC Glow Discharge Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Jennifer T. Heath ,
James J. Gutierrez ,
J. David Cohen  and
Gautam Ganguly
Jennifer T. Heath
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
James J. Gutierrez
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
Gautam Ganguly
Affiliation:
BP Solar Corporation, Toano, VA 23168, U.S.A.
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Abstract

We have examined the electronic properties of intrinsic amorphous silicon films as a function of deposition rate, and compared these with the performance of companion solar cell p-i-n devices. The device efficiency in the light-soaked state was strongly inversely correlated with growth rate. Film properties were evaluated in both the as-grown and light soaked states using drive-level capacitance profiling and transient photocapacitance spectroscopy. Although deep defect densities measured by drive-level capacitance profiling did not vary significantly between samples, the magnitude of the defect band deduced via transient photocapacitance spectroscopy was well correlated with device performance. Possible reasons for this discrepancy are discussed. Urbach energies were also correlated with film growth rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A13.2
Copyright
Copyright © Materials Research Society 2002

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References

1. Guha, S., Yang, J., Jones, S., Chen, Y., and Williamson, D.L., Appl. Phys. Lett. 61, 1444 (1992).Google Scholar
2. Ganguly, G., Lin, G., Chen, L.F., He, M., Wood, G., Carlson, D., and Arya, R., Mat. Res. Soc. Symp. Proc. 557, 127 (1999).Google Scholar
3. Heath, J. T., Iyer, S. B., Lubianiker, Y., Cohen, J. D., and Ganguly, G., Mat. Res. Soc. Symp. Proc. 664, A25.3 (2001).Google Scholar
4. Michelson, C. E., Gelatos, A. V., and Cohen, J. D., Appl. Phys. Lett. 31, 412 (1985).Google Scholar
5. Unold, T., Hautala, J., and Cohen, J.D., Phys. Rev. B50, 16985 (1994).Google Scholar
6. Gelatos, A.V., Cohen, J.D., and Harbison, J.P., Appl. Phys. Letters 49, 722 (1986).Google Scholar
7. Gelatos, A.V., Mahavadi, K.K., Cohen, J.D., and Harbison, J.P., Appl. Phys. Lett. 53, 403 (1988).Google Scholar
8. Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1981).Google Scholar
9. Stutzmann, M., Philos. Mag. B60, 531 (1989).Google Scholar
10. Jiao, L., Liu, H., Semonsikina, S., Lee, Y., and Wronski, C.R., Appl. Phys. Lett. 69, 3713 (1996).Google Scholar
11. Xu, X., Yang, J., and Guha, S., Appl. Phys. Lett. 62, 1399 (1993).Google Scholar
12.See, for example, Wronski, C. R., Jiao, L., Koval, R., and Collins, R.W., Opto-Electronics Review 8, 275 (2000).Google Scholar