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The Effect of Incomplete Collision Cascades on The Angle of Ion Incidence Behaviour of Interface Mixing

Published online by Cambridge University Press:  25 February 2011

R.P. Webb  and
I.H. Wilson
R.P. Webb
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
I.H. Wilson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
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Abstract

A new geometrical theory of sputtering is extended to investigate the behaviour of interface mixing as a function of the angle of ion incidence. It is found that the amount of mixing peaks with the angle of incidence at different angles depending upon the depth of the interface. When the interface is at the surface the mixing parameter behaves as the sputtering yield and maximises around 70°, whilst deeper interfaces, around the damage range, have maximum mixing at normal incidence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 147
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1)See for example: Nucl. Instr. and Meth. 182/183 (1981) Section I.Google Scholar
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