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Effect of Implantation Conditions on the Microstructure of High-Current, Oxygen Implanted Silicon-on-Insulator Material

Published online by Cambridge University Press:  25 February 2011

S. Visitsemgtrakul ,
B.F. Cordts  and
S. Krause
S. Visitsemgtrakul
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287
B.F. Cordts
Affiliation:
Ibis Technology Corporation, 32A Cherry Hill Drive, Danvers, MA 01923.
S. Krause
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287
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Abstract

Conventional and high resolution electron microscopy were used to study structural development in silicon-on-insulator material produced by oxygen implantation at temperatures of 525 to 700°C, doses of 0.3 to 1.8 × 1018 cm-2, and current densities of 1 and 10 mA/cm2. Implantation temperature has the strongest effect on the microstructure and defect formation, both in as-implanted and annealed material. In the top silicon layer of as-implanted SIMOX, oxygen bubbles form near the surface when the wafer temperature is ≥ 550°C. A new type of defect, the multiply faulted defect (MFD), has been observed at the upper edge of the implantation region with a density of 108 cm-2 in the samples implanted at the temperature of ≥ 600°C. As dose increases from 0.3 to 1.8 × 1018 cm-2, the bubbles grow larger and the trails of bubbles lengthen while the character and density of MFDs remain the same. A continuous buried oxide layer forms at doses ≥ 1.5 × 1018 cm2. No significant difference in structure is observed when a current-density increases from 1 to 10 mA/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 161
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Izumi, K., Doken, M., and Ariyoshi, H., Electron. Lett., 14, 593 (1978).Google Scholar
2 Colinge, J.P., IEEE Electron Dev. Lett., EDL-7,279 (1986).Google Scholar
3 Cristoloveanu, S. in Silicon-on-Insulator and Buried Metals in Semiconductors, edited by Sturm, J.C., Chen, C.K., Pfeiffer, L., Hemment, P.L.J.F. (Mat. Res. Soc. Proc. 107, Pittsburgh, PA 1988) p 335.Google Scholar
4 Davis, G.E., ibjd., p.317.Google Scholar
5 Hemment, P. L. F., Maydell-Ondrusz, E., Stephens, K. G., Butcher, J. B., Ioannov, D., and Alderman, J., Nucl. Instr. and Meth. 209/210,157 (1983).Google Scholar
6 Wittkower, A. and Guerra, M., Nucl. Instr. and Meth. B37/38,512–517 (1989).Google Scholar
7 Krause, S. J., Jung, C. O., Ravi, T. S., Wilson, S., and Burke, D. E. in Silicon-on-Insulator and Buried Metals in Semiconductors, edited by Sturm, J.C., Chen, C.K., Pfeiffer, L., Hemment, P.L.F. (Mat. Res. Soc. Proc. 107, Pittsburgh, PA 1988) pp 93–104.Google Scholar
8 Visitserngtrakul, S., Krause, S.J., Cordts, B.F., and Roitman, P., Vacuum, in press.Google Scholar
9 Bravman, J.C. and Sinclair, R., J. Electron Microsc. Tech., 1,53 (1984).Google Scholar
10 Bourret, A., Thibault-Desseaux, J., Seidman, D.N., J. Appl. Phys. 55,825 (1984).Google Scholar
11 Bender, H., Phys. Stat. Sol. (a) 86,245 (1984).Google Scholar
12 Ommen, A.H. van, Koek, B.H., and Viegers, M.P.A., Appl. Phys. Lett. 49,628 (19886).Google Scholar
13 Veirman, A. De, Yallup, K., Landuyt, J. Van, Maes, H.E., and Amelinckx, S., Inst. Phys. Conf. Ser. 87, 403 (1987).Google Scholar
14 Salisbury, I.G. and Loretto, M.H., Phil. Mag., A39,317 (1979).Google Scholar
15 Tan, T.Y., Foil, H., and Hu, S.M., Phil. Mag. A44,127 (1981).Google Scholar
16 Bourret, A., Inst. Phys. Conf. Ser. 87,39 (1987).Google Scholar
17 Bender, H. and Vanhellemont, J., Phys. stat. Sol. (a) 107,455 (1988).Google Scholar
18 Tan, T. Y. and Tice, W. K., Phil. Mag. 30,615 (1976).Google Scholar
19 Pirouz, P., Scripta Met. 21,1463 (1987).Google Scholar
20 Maszara, W.P., J. Appl. Phys. 64,123 (1988).Google Scholar
21 El-Ghor, M.K., Pennycook, S.J., sorjeen, T.P., White, C.W., Biuono, N., and Narayan, J. in Silicon-on-Insulator and Buried Metals in Semiconductors, edited by Sturm, J.C., Chen, C.K., Pfeiffer, L., Hemment, P.L.F. (Mat. Res. Soc. Proc. 107, Pittsburgh, PA 1988) p 79.Google Scholar