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The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films

  • N. R. Manning (a1) (a2), Haydn Chen (a1) (a2), J. R. Abelson (a1) (a3) and L. H. Allen (a1) (a3)

Abstract

Samples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum. The activation energies and reaction prefactors were determined by monitoring the film thickness using x-ray diffraction and by 4-point resistivity measurements. The crystallographic texture of the metal overlayer and suicide films were investigated before and after the reaction.

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