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Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 March 2011

F. Fedler ,
J. Stemmer ,
R. J. Hauenstein ,
T. Rotter ,
A. M. Sanchez ,
A. Ponce ,
S. I. Molina ,
D. Mistele ,
H. Klausing  and
O. Semchinova
...Show all authors
F. Fedler
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
J. Stemmer
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
R. J. Hauenstein
Affiliation:
Department of Physics, Oklahoma State University, OK, USA
T. Rotter
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
A. M. Sanchez
Affiliation:
Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, SPAIN
A. Ponce
Affiliation:
Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, SPAIN
S. I. Molina
Affiliation:
Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Universidad de Cadiz, SPAIN
D. Mistele
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
H. Klausing
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
O. Semchinova
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
J. Aderhold
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
J. Graul
Affiliation:
Laboratorium für Informationstechnologie, Universität Hannover, GERMANY
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Abstract

Wurtzite GaN samples containing one, three and five 4nm thick high temperature (HT) AlN Interlayers (IL) have been grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). N-polar as well as Ga-polar thin films have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and electrical measurements.

All samples under consideration show excellent AFM rms surface roughness below 1nm. Previously, we published a reduction of the threading dislocation (TD) density by a factor of seven due to the introduction of one AlN-IL. When introducing multiple AlN-IL a reduction by a factor of 5.2 is achieved.

Hall measurements show a rise in electron mobility due to possible 2DEG formation at the interface between GaN and the AlN-ILs. Significant growth mode differences between Ga-polar and N-polar samples result in drastically higher electron mobility values for N-polar material. For N-polar samples the exceptional mobility increase from 68 (no AlN-IL) to 707 cm2/Vs (one AlN-IL) as well as the extremely low intrinsic carrier density of 1 x 1017 cm-3 prove the applicability of AlN barriers in inverted FET devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.34.1
Copyright
Copyright © Materials Research Society 2002

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