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Effect of Film Composition on Low Temperature Processing of SBT Deposited by MOCVD

  • Harald Bachhofer (a1) (a2), Frank Hintermaier (a1), Manfred Hauf (a1), Oswald Spindler (a1), Thomas Haneder (a1) (a2), Christine Dehm (a1), Henning von Philipsborn (a2) and Rainer Waser (a3)...

Abstract

Bi-layered ferroelectric strontium bismuth tantalate (SBT) thin films of various film compositions were deposited on Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) and crystallized at 700°C in oxygen ambient. Phase transition, orientation, second phases and remanent polarization were investigated with respect to film stoichiometry. X-ray diffraction (XRD) measurements revealed that excess Bi lowers the transition temperature from fluorite-type to ferroelectric phase. However, SBT films with Bi-excess of 15% or higher exhibit pronounced Bi-loss during crystallization and a decrease in the relative intensity of the (200) peak. Highly Sr-deficient films are not fully crystallized but support pyrochlore formation. The maximum remanent polarization is obtained at a Sr-deficiency of 15–25% and a Bi-excess of 10% (0.85/2.20/2.00).

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