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Effect of Doping on Nanowire Morphology during Plasma-assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  21 May 2012

Andrew J. Lohn ,
Kate J. Norris ,
Robert D. Cormia ,
Elane Coleman ,
Gary S. Tompa  and
Nobuhiko P. Kobayashi
Andrew J. Lohn
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
Kate J. Norris
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
Robert D. Cormia
Affiliation:
Foothill College, Los Altos Hills CA, 94022, USA
Elane Coleman
Affiliation:
Structured Materials Industries Inc, Piscataway NJ, 08854, USA
Gary S. Tompa
Affiliation:
Structured Materials Industries Inc, Piscataway NJ, 08854, USA
Nobuhiko P. Kobayashi
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 94040, USA Nanostructured Energy Conversion Technology and Research (NECTAR) of Advanced Studies Laboratories (ASL), University of California Santa Cruz and NASA Ames Research Center, Moffett Field CA, 94035, USA
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Abstract

Morphologies of silicon nanowires grown by plasma-assisted metalorganic chemical vapor deposition were studied in the presence of various dopant precursors. The varied precursors affected the axial and radial growth rates over orders of magnitude where triethylborane showed the strongest enhancements for both axial and radial growth, and triethylarsenic and triethylantimony retarded axial growth. Native oxide thickness is also shown to depend strongly on doping condition resulting in increased oxide thicknesses for increased carrier concentration, using shifts in the measured binding energy of the silicon 2p3/2 state as a proxy for carrier concentration.

Keywords

dopantnanostructureplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 25 - 31
Copyright
Copyright © Materials Research Society 2012

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References

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