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Effect of Dopant Concentration on the Growth of Oxide Precipitates in Silicon

Published online by Cambridge University Press:  21 February 2011

Satoru Matsumoto ,
Ichiro Ishihara ,
Hiroyuki Kaneko ,
Hirofumi Harada  and
Takao Abe
Satoru Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama, 223, JAPAN
Ichiro Ishihara
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama, 223, JAPAN
Hiroyuki Kaneko
Affiliation:
Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama, 223, JAPAN
Hirofumi Harada
Affiliation:
Shin-Etsu Handotai Co., Isobe, Annaka,Gunma, 379-01, JAPAN
Takao Abe
Affiliation:
Shin-Etsu Handotai Co., Isobe, Annaka,Gunma, 379-01, JAPAN
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Abstract

The dependences of dopant species and concentrations on the growth of oxide precipitates have been studied using transmission electron microscopy. Doping species are phosphorus, antimony and boron. Samples were annealed at 800°C and 850°C for 24∼384hr in dry nitrogen. In phosphorus-doped silicon, the precipitate density is independent of doping concentration and the growth of precipitate obeys the three-quarter power law. The enhancement of the precipitate growth is observed in antimony-doped silicon. On the other hand, the precipitate growth is suppressed in heavily boron-doped silicon as compared with that of lightly boron-doped silicon. This indicates the generation of excess silicon interstitials in heavily boron-doped silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 263
Copyright
Copyright © Materials Research Society 1985

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References

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