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The Effect of Digm and Irradiation-Induced Grain Growth on Interdiffusion in Bilayer Ion-Beam Mixing Experiments*

Published online by Cambridge University Press:  25 February 2011

Dale E. Alexander ,
L. E. Rehn ,
Peter M. Baldo  and
Y. Gao
Dale E. Alexander
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
L. E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Peter M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Y. Gao
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Experiments were performed demonstrating that ion irradiation enhances diffusion-induced grain boundary migration (DIGM) in polycrystalline Au/Cu bilayers. Here, a model is presented relating film-averaged Cu composition in Au with treatment time, grain size and film thickness. Application of this model to the experimental results indicates that irradiation enhances DIGM by increasing the grain boundary velocity. The effects of DIGM and irradiation-induced grain growth on the temperature dependence of ion mixing in bilayers are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 497
Copyright
Copyright © Materials Research Society 1993

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Footnotes

**

Visiting scholar from the General Research Institute for Non-Ferrous Metals, Beijing, PRC

*

Work funded by the U. S. Department of Energy, BES-DMS, Contract #W-31–109-Eng-38.

References

[1] Rehn, L. E. and Okamoto, P. R., Nucl. Instrum. Methods B39, 104–113 (1989).Google Scholar
[2] Cheng, Y. -T, Phys. Rev. B 40, 7403–7405 (1989).Google Scholar
[3] Rossi, F. and Nastasi, M., J. Appl Phys. 69, 1310–1319 (1991).CrossRefGoogle Scholar
[4] Akano, U. G., Thompson, D. A., Smeltzer, W. W. and Davies, J. A., J. Mater. Res. 3, 1063–1071 (1988).Google Scholar
[5] Handwerker, C. A. in Diffusion Phenomena in Thin Films and Microelectronic Materials edited by Gupta, D. and Ho, P. S. (Noyes Publications, Park Ridge, NJ, 1988).Google Scholar
[6] Pan, J. D. and Balluffi, R. W., Acta. Metall. 30, 861–870 (1982).Google Scholar
[7] Gao, Y., Alexander, D. E. and Rehn, L. E. in these proceedings.Google Scholar
[8] Liu, J. C. and Mayer, J. W., Nucl. Instrum. Methods B19/20, 538–542 (1987).Google Scholar
[9] Glaeser, A. M. and Evans, J. W., Acta. Metall. 34, 1545–1552 (1986).Google Scholar
[10] Kaur, I. and Gust, W., Handbook of Grain and Interphase Boundary Diffusion Data (Ziegler Press, Stuttgart, Germany, 1989).Google Scholar
[11] Muller, A., Naundorf, V. and Macht, M.-P., J. Appl Phys. 64, 3445–3455 (1988).Google Scholar