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Effect of Defects on Dielectric Properties in KTiOPO4, KTiOAsO4, RbTiOAsO4 and CsTiOAsO4 Single Crystals

Published online by Cambridge University Press:  15 February 2011

A. R. Guo ,
Z. -Y. Cheng ,
R. S. Katiyar ,
Ruyan Guo  and
A. S. Bhalla
A. R. Guo
Affiliation:
Department of Physics, University of Puerto Rico, P. O. Box 23343, San Juan, PR 00931–3343, USA
Z. -Y. Cheng
Affiliation:
Department of Physics, University of Puerto Rico, P. O. Box 23343, San Juan, PR 00931–3343, USA
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, P. O. Box 23343, San Juan, PR 00931–3343, USA
Ruyan Guo
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA, 16802–4801, USA
A. S. Bhalla
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA, 16802–4801, USA
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Abstract

Dielectric measurements were carried out in single crystals of KTiOPO4, KTiOAsO4, RbTiOAsO4 and CsTiOAsO4. All of the materials exhibit a clear dielectric relaxation process in the low temperature range and a conductance mechanism in the high temperature range. The dielectric relaxation process can be well described by the Debye dielectric model with an activation energies of 0.8 eV, 0.5 eV and 0.4 eV respectively. The relaxation process is associated with the deviation of the alkali ions from its ideal lattice positions. The high temperature conductance is associated with the motion of the alkali ions from one lattice site to another. Therefore, both the low temperature relaxation process and the high temperature conductance originate from different features of defect behavior of alkali ions in the cage structure of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 453: Symposium R – Solid State Chemistry of Inorganic Materials , 1996 , 507
Copyright
Copyright © Materials Research Society 1997

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References

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