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The Effect of Co-Dopants on the Photoluminescence of Er3+ in Silicon

Published online by Cambridge University Press:  21 February 2011

J. J. Pradissitto ,
M. Federighi ,
C. W. Pitt ,
W. P. Gillin ,
A. G. James  and
R. J. Wilson
J. J. Pradissitto
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC I 7JE
M. Federighi
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC I 7JE
C. W. Pitt
Affiliation:
Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC I 7JE
W. P. Gillin
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 5XH
A. G. James
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 5XH
R. J. Wilson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 5XH
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Abstract

This paper presents the results of our investigation into the possibility of increasing both the radiative cross-section and the electrical activation efficiency in erbium (Er3+) doped silicon (Si). The energy levels of the isolated Er3+ have been theoretically predicted, employing the Thomas-Fermi method. The behaviour of these levels in Si was then investigated using a Kronig-Penney approach. Initial theoretical results imply that fluorine (F), in addition to Er3+ in Si, increases the radiative cross-section of Er3+ by at least an order of magnitude, and that co-doping appears to enhance the mixing of the 4f and 5d levels and causes the Er3+ energy levels to overlap with those of the host. Photoluminescence spectra of Er3+ in Si co-doped with F also indicate an interaction with the host lattice which appears to be dependent on its electrical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 392: Symposium U – Thin Films for Integrated Optics Applications , 1995 , 217
Copyright
Copyright © Materials Research Society 1995

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