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Effect of Cl in Gate Oxidation

  • P. W. Mertens (a1), M. J. McGeary (a2), M. Schaekers (a1), H. Sprey (a3), B. Vermeire (a1) (a4), M. Depast (a1), M. Meuris (a1) and M. M. Heyns (a1)...

Abstract

The present study reviews the use of Cl in gate oxidation furnaces for growth of high quality gate oxides with a thickness in the range of 2 to 15 nm. The following, commercially available, “state of the art” Cl-precursors have been tested: 1,1,1- trichloroethane (TCA), irons-1,2-dichloroethylene (DCE) and oxalyl chloride (OC). Different parameters were evaluated including: metal removal efficiency, poly-silicon haze, Fe bulk incorporation, carrier lifetime and Cl-incorporation in the oxide. Cl2was identified as the active component in Cl-oxidation. As a consequence, OC was identified as being the most efficient Cl-source. In particular, OC is the most suited Cl-source for applications requiring reduced oxygen concentration, such as the manufacturing of ultra thin gate oxides.

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[1] Kriegler, R.J., Chen, Y.C. and Colton, D.R., J. Electrochem. Soc. 119, 388 (1972).
[2] Tressler, R.E., Stach, J. and Metz, D.M., J. Electrochem. Soc. 124, 607 (1977).
[3] Monkowski, J., Solid State Technology July 1979, p. 58.
[4] Rohatgi, A., Butler, S.R. and Feigl, F.J., J. Electrochem. Soc. 126, 149 (1979).
[5] Janssens, E.J. and Declerck, G.J., J. Electrochem. Soc. 125, 1696 (1978).
[6] Mertens, P.W., Meuris, M., Verhaverbeke, S., Heyns, M.M., Schnegg, A., Graf, D. and Phili-possian, A., in IES 38th Annual Technical Meeting 1992 Proceedings Vol. 1, (IES, Mount Prospect, Illinois, 1992) p. 475.
[7] Takiyama, M., Ohtsuka, S., Hayashi, S. and Tachimori, M., Proc. of 19th Workshop on ULSI Ultra Clean Technology; Advanced Silicon Wafer Qualities for ULSI, p. 96 Ultra Clean Soc. (1992).
[8] Loewenstein, L.M. and Mertens, P.W., Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 192nd Electrochemical Society Meeting, Paris, France, Aug. 30 - Sept. 5, 1997 (to be published in the proceedings).
[9] Mertens, P.W., Gräf, D., Verhaverbeke, S., Meuris, M., Heyns, M., Schneggand, A., Philipossian, A.: Abstracts of First International Symposium on Ultra Clean Processing of Silicon Surfaces, Leuven, Belgium, Sept. 17 – 19, 1992.
[10] Mertens, P.W., Gräf, D., Schnegg, A., Verhaverbeke, S., Meuris, M., Heyns, M., Declerck, G. and Philipossian, A., Abstracts of 23rd IEEE Semiconductor Interface Specialists Conference 92, San Diego, Dec. 9 – 12. 1992.
[11] Mertens, P.W., Schmidt, H.F., Meuris, M., Verhaverbeke, S., Gräf, D., Dillenbeck, K., Salem, S.S. and Heyns, M.M., in Tech. Dig. 1993 Symp. on VLSI Technol., (JSAP, Tokyo, 1993) p. 111.
[12] Mertens, P.W., Meuris, M., Schmidt, H.F., Verhaverbeke, S., Heyns, M.M., Carr, P., Gräf, D., Schnegg, A., Kubota, M., Dillenbeck, K. and de Blank, R., in Proceedings of the Satellite Symposium to Essderc 93 Grenoble/Prance (The Electrochemical Society, Pennington, NJ) 93–15, 87, (1993).
[13] The National Technology Roadmap for Semiconductors, (Semiconductor Industry Association, San Jose, 1994), p. 113, 116.
[14] Robingson, P.H. and Heiman, F.P., J. Electrochem. Soc. 118, 141 (1971).
[15] Vereecke, G., Anderson, N., Elsmore, C., Espitalier-Noel, P. and Heyns, M.M., in Proceedings of the Third International Symposium on Ultra-Clean Processing of Silicon Surfaces (Acco, Leuven, 1996), p. 69.
[16] Mertens, P.W., Hurd, T.Q., Gräf, D., Meuris, M., Schmidt, H.F., Heyns, M.M., Kwakman, L., Hendriks, M. and Kubota, M.: in Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing III (The Electrochemical Society, Pennington, NJ), 94–9, p. 241.
[17] Declerck, G.J., Hattori, T., May, G.A., Beaudouin, J. and Meindl, J.D., J. Electrochem. Soc. 122, 436 (1975).
[18] Yoneda, K., Hagiwara, K., Oiehi, H. and Todokoro, Y., J. Electrochem. Soc. 142, 4304 (1995).
[19] Hochberg, A.K., Lagendijk, A., Roberts, D.A., Agny, R., Anders, B., Cotner, R., Jewett, J., Mulready, J., Tran, M., Triplett, B.B. and Wermer, P., J. Electrochem. Soc. 139, L117 (1992).
[20] Vermeire, B., Mertens, P.W., McGeary, M.J., Kenis, K., Heyns, M.M., Schaekers, M. and Lubbers, A., in Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (Acco, Leuven, 1994), p. 143.
[21] Mertens, P.W., Vermeire, B., McGeary, M.J., Meuris, M., Heyns, M., Depas, M., Sees, J., O'Brien, S.C. and Gräf, D., in Institute of Environmental Science 41st Annual Technical Meeting 1995 Proceedings Vol. CC (IES, Mount Prospect, Illinois, 1995), p. 474.
[22] McGeary, M.J., Mertens, P.W., Vermeire, B., Heyns, M., Sprey, H., Lubbers, A. and Schaekers, M., Mat. Res. Soc. Fall Meeting, Dec. 2–6 1996, Boston, USA, to be published in the proceed.
[23]“ESC-96 Product Data” Olin Corporation, Electronic Materials Division, Diffusion Systems, Seward Illinois, 1996.
[24] “Trans-LC” Schumacher Carlsbad, CA, 1/7/94.
[25] Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N. and Shiraiwa, T., Jpn. J. Appl. Phys. 27, L2361 (1988).
[26] Honda, K., Ohsawa, A. and Nakanish, T., J. Electrochem. Soc. 142, 3486 (1995).
[27] Mertens, P.W., Rotondare, A.L.P., Meuris, M., Schmidt, H.F., Heyns, M.M. and Gräf, D., in Institute of Environmental Science 40th Annuol Technical Meeting 1994 Proceedings Vol. 1 (IES, Mount Prospect, Illinois, 1994), p. 325.
[28] Mertens, P.W., De Gendt, S., Depas, M., Kenis, K., Opdebeeck, A., Snee, P., Gräf, D., Brown, G. and Heyns, M.M., in Proceedings of the Third International Symposium on Ultra-Clean Processing of Silicon Surfaces (Acco, Leuven, 1996), p. 33.
[29] Kaniava, A., Rotondare, A.L.P., Vanhellemont, J., Simoen, E., Gaubas, E., Vaitkus, J., Hurd, T.Q., Mertens, P.W., Claeys, C. and Gräf, D., in Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (Acco, Leuven, 1994), p. 197.
[30] Rotondare, A.L.P., Hurd, T.Q., Mertens, P.W., Schmidt, H.F., Heyns, M.M., Simoen, E., Vanhellemont, J., Vágh, G., Claeys, C. and Gräf, D., The 186th Meeting of the Electrochemical Society, Symposium on High Purity Silicon III, Miami Beach, FL, October 9 – 14, 1994, in Extended Abstracts, abstract number 406.
[31] Deal, B.E., Hurrle, A. and Schulz, M.J., J. Electrochem. Soc. 125, 2024 (1978).
[32] Monkowski, J., Solid State Technology August 1979, p. 113.
[33] Nguyen, B.-Y., Limb, Y., Tobin, P.J., Huffman, G., Kouba, C., Gonzales, S. and La, L., in Tech. Dig. 1993 Symp. on VLSI Technol., (JSAP, Tokyo, 1993) p. 109; and
Limb, Y., Nguyen, B.-Y. and Tobin, P.J., in Proceedings of the Symposium on Cleaning Technology in Semiconductor Device Manufacturing (The Electrochemical Society, Pennington, NJ, 1994), 94–7, p. 409.

Effect of Cl in Gate Oxidation

  • P. W. Mertens (a1), M. J. McGeary (a2), M. Schaekers (a1), H. Sprey (a3), B. Vermeire (a1) (a4), M. Depast (a1), M. Meuris (a1) and M. M. Heyns (a1)...

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