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Effect of Characteristics of SrRuO3 Buffer Layer on the Ferroelectric Properties of (Pb0.97La0.30)(Zr0.66Ti0.34)O3 Thin Films

  • Yu-Jen Chen (a1), Gwo Jamn (a1), Kuo-Shung Liu (a1) and I-Nan Lina (a2)

Abstract

A two-step pulsed laser deposition (PLD) process, including PLD at a substrate temperature lower than 150°C and rapid-thermal-annealing (RTA) at around 550°C (30 s), has been successfully applied for growing (Pb0.97La0.03)(Zr0.66Ti0.034)0.9875O3, PLZT, thin films. Interdiffusion between layers is pronouncedly suppressed due to the presence of the SrRuO3 layer, which markedly improves the electrical properties of PLZT films. The PLZT films thus obtained exhibit large remanent polarization P,=19 µC/cm2 (with coercive force Ec=78 kV/cm), low leakage current density J11≤8 × 1O−6 A/cm2 (up to 400 kV/cm) and fatigue free characteristics.

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Effect of Characteristics of SrRuO3 Buffer Layer on the Ferroelectric Properties of (Pb0.97La0.30)(Zr0.66Ti0.34)O3 Thin Films

  • Yu-Jen Chen (a1), Gwo Jamn (a1), Kuo-Shung Liu (a1) and I-Nan Lina (a2)

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