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The Effect of Channel-Protect Oxide on Laser Recrystallized Silicon-on-insulator MOS devices.

Published online by Cambridge University Press:  28 February 2011

S. Sritharan ,
G. J. Collins ,
J. Fukumoto ,
N. Szluk ,
K. M. Jones  and
M. M. Al-Jassim
S. Sritharan
Affiliation:
Colorado State University, Fort Collins, C080523.
G. J. Collins
Affiliation:
Colorado State University, Fort Collins, C080523.
J. Fukumoto
Affiliation:
NCR Microelectronics, Ft Collins, C080525.
N. Szluk
Affiliation:
NCR Microelectronics, Ft Collins, C080525.
K. M. Jones
Affiliation:
SERI, Golden, C080401.
M. M. Al-Jassim
Affiliation:
SERI, Golden, C080401.
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Abstract

Latchup free lateral CMOS transistors with PMOS devices in the laser recrystallized silicon and the NMOS devices in the bulk silicon were fabricated. One micron thick field oxide isolates the PMOS devices in the recrystallized silicon from the NMOS devices in the bulk wafer. The seed area for recrystallization was used for the fabrication of the NMOS devices. An oxide layer of 0.1um thickness was used to protect the channel region of the NMOS devices during the laser recrystallization. The effect of this channel protect-oxide is discussed and the characteristics of the NMOS devices with and without the channel protect oxide are compared.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 621
Copyright
Copyright © Materials Research Society 1987

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References

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