Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T03:21:13.427Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Boron on Diffusion Barrier Characteristics of Pecvd W-B-N Films

Published online by Cambridge University Press:  10 February 2011

Dong Joon Kim ,
Yong Tae Kim  and
Jong-Wan Park
Dong Joon Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, 17, Haengdang-dong, Seongdong-ku, Seoul, 133–791
Get access

Abstract

The effects of B and N addition on the phase transition and barrier performance of the plasma deposited W-B-N films are investigated. The W-B-N films have chemical compositions in the range from W67N33 to W38B42N20 corresponding to the flow ratio of B10H14/NH3. Among the films of various compositions of B and N, W46B25N29 film shows excellent thermal stability against the Cu diffusion because the W46B25N29 film keeps the amorphous state even after the annealing at 800°C for 30 min. Resonance backscattering and x-ray photoemission spectra for B and N atoms before and after the annealing process indicate that the amorphous state is retained due to the formation of the B-N bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 417
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pai, P. L. and Ting, C. H., IEEE Electron Device Lett., 10, 423 (1989)Google Scholar
2. Myazaki, H., Hinode, K., Homma, Y and Mukai, K., Jpn. J. Appl. Phys., 48, 329 (1987)Google Scholar
3. Kwon, C. S., Kim, D. J. and Kim, Y. T., Mater. Res. Soc. Symp. Proc., 355, 441 (1995)10.1557/PROC-355-441Google Scholar
4. Sze, S. M., and Irvin, J. C., Solid state Electron., 11, 599 (1968)Google Scholar
5. Chang, C A., J. Appl. Phys., 67, 566 (1990)Google Scholar
6. Kim, D. J., Kim, Y. T. and Park, J. W., J. Appl. Phys., 82, 4847 (1997)10.1063/1.366346Google Scholar
7. Sun, X., Reid, J. S., Kolawa, E. and Nicolet, M. -A., J. Appl. Phys., 81, 656 (1997)Google Scholar
8. Reid, J. S., Liu, R. Y., Smith, P. M., Luiz, R. P. and Nicolet, M. -A., Thin Solid Films, 262, 218 (1995)10.1016/0040-6090(94)05810-5Google Scholar
9. Kolawa, E., Pokela, P. J., Reid, J. S., Chen, J. S. and Nicolet, M.-A., Appl. Surf. Sci., 53, 373 (1991)Google Scholar
10. Reid, J. S., Kolawa, E., Ruiz, R.P. and Nicolet, M. -A., Thin Solid Films, 236, 319 (1993)10.1016/0040-6090(93)90689-MGoogle Scholar