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Effect of Argon Addition on Nitrogen Containing Carbon Films Prepared by Hot Carbon Filament CVD

Published online by Cambridge University Press:  10 February 2011

Yoshihisa Watanabe ,
Shinobu Ohnita ,
Nobuaki Kitazawa  and
Yoshikazu Nakamura
Yoshihisa Watanabe
Affiliation:
Department of Matenials Science and Engineering, National DefenseAcademy, 1-10-20 Hashirnmizu, Yokosuka, Kanagawa 239-8686, Japan, ywat@cc.nda.ac.jp
Shinobu Ohnita
Affiliation:
Department of Matenials Science and Engineering, National DefenseAcademy, 1-10-20 Hashirnmizu, Yokosuka, Kanagawa 239-8686, Japan
Nobuaki Kitazawa
Affiliation:
Department of Matenials Science and Engineering, National DefenseAcademy, 1-10-20 Hashirnmizu, Yokosuka, Kanagawa 239-8686, Japan
Yoshikazu Nakamura
Affiliation:
Department of Matenials Science and Engineering, National DefenseAcademy, 1-10-20 Hashirnmizu, Yokosuka, Kanagawa 239-8686, Japan
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Abstract

Nitrogen containing amorphous carbon (a-CNx) films were prepared on silicon single crystal substrates by heating a carbon filament in low pressure nitrogen atmosphere and the effects of argon addition to nitrogen atmosphere were studied by changing the argon fraction under the total pressure of 100 Pa. The growth rate of the films is found to decrease with increasing the argon fraction. x-ray photoelectron spectroscopy shows that the films are composed of carbon and nitrogen and the optimal fraction of argon addition is observed for increasing the nitrogen concentration. Observations by atomic force microscopy reveal that the film surfaces are covered with particle-like features and the size of the features decreases drastically by argon addition. It is concluded that argon addition to the reactant gas is effective in synthesizing a-CNx films with the smooth surface and high nitrogen concentration

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 425
Copyright
Copyright © Materials Research Society 2000

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References

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