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The Effect of Annealing on High-resistivity and Semi-insulating 4H-SiC

Published online by Cambridge University Press:  11 February 2011

S. R. Smith ,
A. O. Evwaraye  and
W. C. Mitchel
S. R. Smith
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base, OH 45433–7707
A. O. Evwaraye
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base, OH 45433–7707
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLPS, Wright-Patterson Air Force Base, OH 45433–7707
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Abstract

We have examined specimens of high-resistivity, and semi-insulating, 4H-SiC before and after thermal annealing at 1600 °C, using Optical Admittance Spectroscopy. We have found enhanced ultraviolet response in most specimens. Enhanced activation of previously undetected V impurities has also been observed. Peaks believed to be attributable to complex V-related defects were greatly reduced by annealing. The annealing was in addition to a thermal oxidation at 1150 °C for 4 hours. The purpose of the oxidation was to remove surface-related deep levels known to be present in polished SiC. Transition metal impurities in these bulk specimens were quantified by SIMS. In specimens where Ti was not detected by SIMS, no further activation of Ti centers was detected by Optical Admittance Spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K5.16
Copyright
Copyright © Materials Research Society 2003

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References

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