Skip to main content Accessibility help
×
Home

The effect of a high temperature reaction of Cu-In-Ga metallic precursors on the formation of Cu(In,Ga)(Se,S)2

  • Dominik M. Berg (a1), Christopher P. Thompson (a1) and William N. Shafarman (a1)

Abstract

The influence of higher processing temperatures on the formation reaction of Cu(In,Ga)(Se,S)2 thin films using a three step reactive annealing process and on the device performance has been investigated. High process temperatures generally lead to the formation of larger grains, decrease the amount of void formation and their distribution at the back Mo/Cu(In,Ga)(Se,S)2 interface, and lead to a much faster formation reaction that shortens the overall reaction process. However, high temperature processing also leads to a decrease in device performance. A loss in open circuit voltage and fill factor could be attributed to enhanced interface recombination processes for the samples fabricated at higher process temperatures, which itself may be caused by a lack of Na and subsequent poor passivation of interface defect states. The lack of Na resulted in a decrease in free charge carrier concentration by two orders of magnitude.

Copyright

References

Hide All
[1] Nakamura, M. et al. ., “Achievement of 17.5% Efficiency with 30x30cm2-Sized Cu(In, Ga)(Se, S)2 Submodules”, in 38th IEEE Photovoltaic Specialists Conference, 2012
[2] Mannstadt, W. et al. ., “New glass substrate enabling high performance CIGS solar cells”, in 25th EU-PVSEC, 2010, p. 35163518
[3] Haarstrich, J. et al. ., Sol. Energ. Mat. Sol. C. 95, 10281030 (2011)
[4] Contreras, M.A. et al. ., “Improved energy conversion efficiency in wide-bandgap Cu(In, Ga)Se2 solar cells”, in 37th IEEE Photovoltaic Specialists Conference, 2011
[5] Kim, K. et al. ., J. Appl. Phys. 111, 083710 (2012)
[6] Michelson, C.E. et al. ., Appl. Phys. Lett. 47, 412 (1985)
[7] Fahrenbruch, A.L. and Bude, R.H., “Fundamentals of Solar Cells”, Academic press, New York, 1983, p. 236239
[8] Thompson, C.P. et al. ., “Temperature dependence of VOC in CdTe and Cu(InGa)(SeS)2-based solar cells”, in 33rd IEEE Photovoltaic Specialists Conference, 2008
[9] Erslev, P.T. et al. ., Thin Solid Films 517, 22772281 (2009)
[10] Contreras, M. A. et al. ., “On the role of Na and modifications to Cu(In, Ga)Se2 absorber materials using thin-MF (M = Na, K, Cs) precursor layers”, in 26th IEEE Photovoltaic Specialists Conference, 1997

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed