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Dynamics of Ga Clusters on GaAs(001) Surface

Published online by Cambridge University Press:  17 March 2011

Shiro Tsukamoto  and
Nobuyuki Koguchi
Shiro Tsukamoto
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
Nobuyuki Koguchi
Affiliation:
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
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Abstract

Dynamics of Ga clusters and GaAs epitaxial growth on a GaAs (001) surface were successfully observed by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy (MBE) were incorporated into one unit rather than in separate chambers. With the substrate temperature of 528°C, reflection high-energy diffraction (RHEED) patterns showed a (4×6) Ga-stabilized surface reconstruction and dynamics of steps and islands were clearly observed. The detaching and attaching of small Ga clusters might cause the change of steps and islands. It seems that the small Ga clusters migrated with the diameter of about 0.8 to 1.2 nm and around the steps and islands. These clusters could be observed only when they were detached from or attached to the steps and islands. Moreover, even under the substrate temperature of 440 oC and the As4 partial pressure of 2×10−6 torr, STM images were clearly observed. After 0.1 ML Ga was additionally supplied to the sample by migration enhanced epitaxy mode, step flow growth occurred, resulting in an additional GaAs layer grown on the B-step side. Moreover, the c(4×4) As-stabilized surface reconstruction was moderate. It seems that there is an equilibrium additional layer of As amorphous adatoms on the c(4x4) surface reconstructions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.20
Copyright
Copyright © Materials Research Society 2001

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